CSD17483F4 Datasheet, PDF (1/12 Pages) Texas Instruments – 30-V, N-Channel NexFET Power MOSFET

CSD17483F4
SLPS447B – JULY 2013 – REVISED FEBRUARY 2014
CSD17483F4, 30 V N-Channel FemtoFET™ MOSFET
1 Features
•1 Low On Resistance
• Low Q_g and Q_gd
• Low Threshold Voltage
• Ultra-Small Footprint (0402 Case Size)
– 1.0 mm x 0.6 mm
• Ultra-Low Profile
– 0.35 mm Height
• Integrated ESD Protection Diode
– Rated > 4 kV HBM
– Rated > 2 kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Single-Cell Battery Applications
• Handheld and Mobile Applications
3 Description
The FemtoFET™ MOSFET technology has been
designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
0.35 ^mm
Product Summary
V_DS
Drain-to-Source Voltage
30
V
Q_g
Gate Charge Total (4.5 V)
1010
pC
Q_gd
Gate Charge Gate to Drain
130
pC
V_GS = 1.8 V
370
R_DS(on) Drain-to-Source On Resistance V_GS = 2.5 V
240 mΩ
V_GS = 4.5 V
200
V_GS(th) Threshold Voltage
0.85
V
Device
CSD17483F4
CSD17483F4T
Ordering Information
Qty Media
Package
Ship
3000
250
7-Inch
Reel
7-Inch
Reel
Femto(0402) 1.0 mm x Tape and
0.6 mm SMD Lead Less Reel
Absolute Maximum Ratings
T_A = 25°C unless otherwise stated
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current, T_A = 25°C⁽¹⁾
I_DM
Pulsed Drain Current, T_A = 25°C⁽²⁾
Continuous Gate Clamp Current
I_G
Pulsed Gate Clamp Current⁽²⁾
P_D
Power Dissipation⁽¹⁾
ESD ^{Human Body Model (HBM)}
Rating _{Charged Device Model (CDM)}
VALUE
30
12
1.5
5
35
350
500
4
2
UNIT
V
V
A
A
mA
mW
kV
kV
T_J,
Operating Junction and
T_STG Storage Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse I_D = 7.4 A,
L = 0.1 mH, R_G = 25 Ω
2.7
mJ
(1) Typical R_θJA = 90°C/W on 1-inch² (6.45-cm²), 2-oz. (0.071-
mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%
Top View
D
0.60 _mm
.
.
1.00 ^mm
GS
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.