CSD17382F4 Datasheet, PDF (1/13 Pages) Texas Instruments – 30V N-Channel FemtoFET MOSFET

Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD17382F4 30-V N-Channel FemtoFET™ MOSFET
CSD17382F4
SLPS562 – APRIL 2016
1 Features
•1 Low On-Resistance
• Low Q_g and Q_gd
• Low Threshold Voltage
• Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
• Ultra-Low Profile
– 0.35-mm Height
• Integrated ESD Protection Diode
– Rated > 3-kV HBM
– Rated > 2-kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Single-Cell Battery Applications
• Handheld and Mobile Applications
3 Description
This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET
technology is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
0.35 ^mm
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
30
2.1
0.63
V_GS = 1.8 V 110
V_GS = 2.5 V
67
V_GS = 4.5 V
56
V_GS = 8.0 V
54
0.9
UNIT
V
nC
nC
mΩ
mΩ
mΩ
mΩ
V
DEVICE
CSD17382F4
CSD17382F4T
.
Ordering Information⁽¹⁾
QTY MEDIA
PACKAGE
3000
250
7-Inch
Reel
Femto (0402) 1.0-mm ×
0.6-mm SMD Lead Less
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current⁽¹⁾
I_DM
Pulsed Drain Current⁽²⁾
P_D
Power Dissipation⁽¹⁾
ESD ^{Human Body Model (HBM)}
Rating _{Charged Device Model (CDM)}
VALUE
30
10
2.3
14.8
500
3000
2000
UNIT
V
V
A
A
mW
V
V
T_J,
Operating Junction,
T_stg Storage Temperature
–55 to 150 °C
E_AS
Avalanche Energy, Single Pulse I_D = 6.5 A,
L = 0.1 mH, R_G = 25 Ω
2.1
mJ
(1) Typical R_θJA = 245°C/W on 1-in² (6.45-cm²), 2-oz.
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4
PCB.
(2) Pulse duration ≤100 μs, duty cycle ≤1%.
Top View
0.60 _mm
.
.
.
.
1.00 ^mm
D
G
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.