CSD17381F4_16 Datasheet, PDF (1/13 Pages) Texas Instruments – 30 V N-Channel FemtoFET MOSFET

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CSD17381F4
SLPS411D – APRIL 2013 – REVISED OCTOBER 2014
CSD17381F4 30 V N-Channel FemtoFET™ MOSFET
1 Features
•1 Ultra-Low On-Resistance
• Ultra-Low Q_g and Q_gd
• Low Threshold Voltage
• Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
• Ultra-Low Profile
– 0.35 mm Height
• Integrated ESD Protection Diode
– Rated >4 kV HBM
– Rated >2 kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Single-Cell Battery Applications
• Handheld and Mobile Applications
3 Description
This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET
technology is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
0.35 ^mm
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
30
1040
133
V_GS = 1.8 V 160
V_GS = 2.5 V 110
V_GS = 4.5 V
90
0.85
UNIT
V
pC
pC
mΩ
mΩ
mΩ
V
Device
CSD17381F4
CSD17381F4T
.
Ordering Information⁽¹⁾
Qty Media
Package
3000
250
7-Inch
Reel
Femto (0402) 1.0 mm
×0.6 mm SMD Lead
Less
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C unless otherwise stated
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current, T_A = 25°C⁽¹⁾
I_DM
Pulsed Drain Current, T_A = 25°C⁽²⁾
Continuous Gate Clamp Current
I_G
Pulsed Gate Clamp Current⁽²⁾
P_D
Power Dissipation⁽¹⁾
ESD ^{Human Body Model (HBM)}
Rating _{Charged Device Model (CDM)}
VALUE
30
12
3.1
10
35
350
500
4
2
UNIT
V
V
A
A
mA
mW
kV
kV
T_J,
Operating Junction and
T_stg Storage Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse I_D = 7.4 A,
L = 0.1 mH, R_G = 25 Ω
2.7
mJ
(1) Typical R_θJA = 90°C/W on 1 inch² (6.45 cm²), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%
Top View
0.60 _mm
.
.
.
.
1.00 ^mm
D
GS
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.