CSD17327Q5A Datasheet, PDF (1/12 Pages) Texas Instruments – 30V, N-Channel NexFET™ Power MOSFETs

CSD17327Q5A
www.ti.com
30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17327Q5A
SLPS332 – JUNE 2011
FEATURES
1
•2 Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
• Optimized for Control FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Text 4 Spacing
R_DS(on) vs V_GS
35
I_D = 11A
30
25
20
15
10
5
T_C = 25°C
T_C = 125ºC
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to- Source Voltage - V
V_DS
Q_g
Q_gd
R_DS(on)
V_GS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5V)
2.8
Gate Charge Gate to Drain
0.8
Drain to Source On Resistance
Threshold Voltage
V_GS = 4.5V
V_GS = 8V
1.6
V
nC
nC
12.5 mΩ
9.9 mΩ
V
Text Added For Spacing
ORDERING INFORMATION
Device
Package
Media Qty
CSD17327Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
Text Added For Spacing
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
VALUE UNIT
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
30
V
+10 / -10
V
65
A
13
A
I_DM
P_D
T_J,
T_STG
E_AS
Pulsed Drain Current, T_A = 25°C⁽²⁾
Power Dissipation⁽¹⁾
Operating Junction and Storage
Temperature Range
Avalanche Energy, single pulse
I_D = 30A, L = 0.1mH, R_G = 25Ω
85
A
3
W
–55 to 150 °C
45
mJ
(1) Typical R_θJA = 44°C/W on 1-inch² (6.45-cm²), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
Text 4 Spacing
GATE CHARGE
10
9
I_D = 11A
V_DD = 15V
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
Q_g - Gate Charge - (nC)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated