CSD17318Q2 Datasheet, PDF (1/13 Pages) Texas Instruments – 30-V N-Channel NexFET Power MOSFET

Product
Folder
Order
Now
Technical
Documents
Tools &
Software
Support &
Community
CSD17318Q2
SLPS667 – FEBRUARY 2017
CSD17318Q2 30-V N-Channel NexFET™ Power MOSFET
1 Features
•1 Optimized for 5-V Gate Drive
• Low Capacitance and Charge
• Low R_DS(ON)
• Low-Thermal Resistance
• Lead Free
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
2 Applications
• Storage, Tablets, and Handheld Devices
• Optimized for Load Switch Applications
• DC-DC Converters
• Battery and Load Management Applications
Product Summary
T_A = 25°C
V_DS Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
30
6.0
1.3
V_GS = 2.5 V
V_GS = 4.5 V
V_GS = 8 V
0.9
20
13.9
12.6
UNIT
V
nC
nC
mΩ
V
Device Information⁽¹⁾
PART NUMBER QTY MEDIA
PACKAGE
CSD17318Q2 3000
7-Inch Reel
CSD17318Q2T 250
SON
2.00-mm × 2.00-mm
Plastic Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 30-V, 12.6-mΩ, 2-mm × 2-mm SON NexFET™
power MOSFET is designed to minimize losses in
power conversion applications and optimized for 5-V
gate drive applications. The 2-mm × 2-mm SON
offers excellent thermal performance for the size of
the package.
Top View
D1
D
D2
6D
5D
G3
S
4S
P0108-01
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
30
±10
21.5
UNIT
V
V
I_D
Continuous Drain Current (Silicon Limited),
T_C = 25°C
25
A
Continuous Drain Current⁽¹⁾
10
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
68
A
2.5
W
16
T_J, Operating Junction,
T_STG Storage Temperature
–55 to 150 °C
E_AS
Avalanche Energy, Single Pulse,
I_D = 12.4 A, L = 0.1 mH, R_G = 25 Ω
7.7
mJ
(1) Typical R_θJA = 55°C/W on a 1-in², 2-oz Cu pad on a
0.06-in thick FR4 PCB.
(2) Max R_θJC = 7°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
On-State Resistance vs Gate to Source Voltage
40
T_C = 25°C, I _D = 8 A
35
T_C = 125°C, I _D = 8 A
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-To-Source Voltage (V)
D007
1
Gate Charge
8
I_D = 8 A
7 ^VDS ^{= 15 V}
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.