CSD17313Q2Q1_15 Datasheet, PDF (1/13 Pages) Texas Instruments – N-Channel NexFET Power MOSFET

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CSD17313Q2Q1
SLPS427D – OCTOBER 2012 – REVISED SEPTEMBER 2015
CSD17313Q2Q1 30-V N-Channel NexFET™ Power MOSFET
1 Features
•1 Qualified for Automotive Applications
• Optimized for 5-V Gate Drive
• Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Pb-Free
• RoHS Compliant
• Halogen-Free
• SON 2-mm × 2-mm Plastic Package
2 Applications
• DC-DC Converters
• Battery and Load Management Applications
3 Description
This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFET™
power MOSFET is designed to minimize losses in
power conversion applications and is optimized for 5-
V gate drive applications. The 2-mm × 2-mm SON
offers excellent thermal performance for the size of
the package.
Top View
D1
D
D2
6D
5D
G3
S
Added text for spacing
4S
P0108-01
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on)
Drain-to-Source On
Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
30
2.1
0.4
V_GS = 3 V
31
V_GS = 4.5 V
26
V_GS = 8 V
24
1.3
UNIT
V
nC
nC
mΩ
mΩ
mΩ
V
Ordering Information⁽¹⁾
PART NUMBER QTY MEDIA
PACKAGE
CSD17313Q2Q1
CSD17313Q2Q1T
3000
250
13-Inch
Reel
7-Inch Reel
SON 2-mm × 2-mm
Plastic Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (package
limited)
VALUE
30
+10 / –8
5
UNIT
V
V
I_D
I_DM
P_D
T_J,
T_STG
E_AS
Continuous Drain Current (silicon
limited), T_C = 25°C
Continuous Drain Current⁽¹⁾
Pulsed Drain Current, T_A = 25°C⁽²⁾
Power Dissipation⁽¹⁾
Power Dissipation, T_C = 25°C
Operating Junction and
Storage Temperature Range
Avalanche Energy, Single Pulse,
I_D = 19A, L = 0.1mH, R_G = 25Ω
19
A
7.3
57
A
2.4
W
17
–55 to 150 °C
18
mJ
(1) Typical R_θJA = 53°C/W on a 1-inch², 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max R_θJC = 7.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%.
On State Resistance vs Gate to Source Voltage
80
T_C = 25°C, I _D = 4 A
70
T_C = 125°C, I _D = 4 A
60
50
40
30
20
10
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
8
I_D = 4 A
7 ^VDS ^{= 15 V}
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.