CSD17308Q3_15 Datasheet, PDF (1/13 Pages) Texas Instruments – 30-V N-Channel NexFET Power MOSFETs

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CSD17308Q3
SLPS262B – FEBRUARY 2010 – REVISED OCTOBER 2015
CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs
1 Features
•1 Optimized for 5-V Gate Drive
• Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• VSON 3.3 mm × 3.3 mm Plastic Package
2 Applications
• Notebook Point of Load
• Point-of-Load Synchronous Buck in Networking,
Telecom, and Computing Systems
3 Description
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON
NexFET™ power MOSFET is designed to minimize
losses in power conversion applications and
optimized for 5-V gate drive applications.
Top View
S
8D
S
7D
S
6D
D
G
5D
P0095-01
Product Summary
T_A = 25°C
V_DS
Drain-to-source voltage
Q_g
Gate charge total (4.5 V)
Q_gd
Gate charge gate to drain
R_DS(on) Drain-to-source on resistance
V_GS(th) Threshold voltage
VALUE
30
3.9
0.8
V_GS = 3 V
V_GS = 4.5 V
V_GS = 8 V
1.3
12.5
9.4
8.2
UNIT
V
nC
nC
mΩ
mΩ
mΩ
V
DEVICE
CSD17308Q3
Ordering Information⁽¹⁾
QTY MEDIA
PACKAGE
2500
13-Inch SON 3.3 mm × 3.3 mm
Reel
Plastic Package
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C unless otherwise stated
V_DS Drain-to-source voltage
V_GS Gate-to-source voltage
Continuous Drain Current (Package
Limited)
I_D
Continuous drain current, T_C = 25°C
Continuous drain current⁽¹⁾
I_DM Pulsed drain current, T_A = 25°C⁽²⁾
Power dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
T_J, Operating Junction and Storage
T_stg Temperature Range
E_AS
Avalanche energy, single pulse
I_D = 36 A, L = 0.1 mH, R_G = 25 Ω
VALUE
30
+10 / –8
UNIT
V
V
50
44
A
14
167
A
2.7
W
28
–55 to 150 °C
65
mJ
(1)
Typical
cm²), 2
R_θJA = 46°C/W when mounted
oz. (0.071 mm thick) Cu pad on a
on a 1 inch² (6.45
0.06 inch (1.52 mm)
thick FR4 PCB.
(2) Max R_θJC = 4.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%.
R_DS(on) vs V_GS
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
D007
1
8
I_D = 10 A
7 ^VDS ^{= 15 V}
Gate Charge
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.