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CSD17308Q3 Datasheet, PDF (1/11 Pages) Texas Instruments – 30V N-Channel NexFET™ Power MOSFETs
CSD17308Q3
www.ti.com
SLPS262A – FEBRUARY 2010 – REVISED OCTOBER 2010
30V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17308Q3
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
APPLICATIONS
• Notebook Point of Load
• Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
S
8D
S
7D
S
G
30
25
20
15
6D
D
5D
P0095-01
RDS(on) vs VGS
ID = 10A
TC = 125°C
10
5
TC = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage - V
G006
VDS
Qg
Qgd
RDS(on)
VGS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5V)
3.9
Gate Charge Gate to Drain
0.8
Drain to Source On Resistance
Threshold Voltage
VGS = 3V
VGS = 4.5V
VGS = 8V
1.3
V
nC
nC
12.5 mΩ
9.4 mΩ
8.2 mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17308Q3
SON 3.3-mm × 3.3-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, Single Pulse
ID = 36A, L = 0.1mH, RG = 25Ω
VALUE
30
+10 / –8
47
13
78
2.7
UNIT
V
V
A
A
A
W
–55 to 150 °C
65
mJ
(1) Typical RqJA = 46°C/W when mounted on a 1-inch2
(6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch
(1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2% TextAddedForSpacing
Text_Added_For_Spacing_Text_Added_For_Spacing
8
7
ID = 10A
VDS = 15V
6
GATE CHARGE
5
4
3
2
1
0
0
1
2
3
4
5
6
7
Qg - Gate Charge - nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
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