CSD17304Q3_10 Datasheet, PDF (1/11 Pages) Texas Instruments – The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

CSD17304Q3
www.ti.com
SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010
30V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17304Q3
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
APPLICATIONS
• Notebook Point of Load
• Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
S1
8D
S2
7D
S3
6D
D
G4
5D
P0095-01
Text 4 Spacing
R_DS(on) vs V_GS
20
18
I_D = 17A
16
14
T_C = 125°C
12
10
8
6
4
T_C = 25°C
2
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage - V
G006
V_DS
Q_g
Q_gd
R_DS(on)
V_GS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5V)
5.1
Gate Charge Gate to Drain
1.1
Drain to Source On Resistance
Threshold Voltage
V_GS = 3V
V_GS = 4.5V
V_GS = 8V
1.3
V
nC
nC
9.8 mΩ
6.9 mΩ
5.9 mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17304Q3
SON 3.3-mm × 3.3-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, Single Pulse
I_D = 42A, L = 0.1mH, R_G = 25Ω
VALUE
30
+10 / –8
56
15
88
2.7
UNIT
V
V
A
A
A
W
–55 to 150 °C
88
mJ
(1) Typical R_qJA = 46°C/W on a 1-inch² (6.45-cm²),
2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick
FR4 PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2%
8
7
I_D = 17A
V_DS = 15V
6
5
4
3
2
1
0
0
2
Text 4 Spacing
GATE CHARGE
4
6
8
Q_g - Gate Charge - nC
10
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated