CSD16415Q5_15 Datasheet, PDF (1/16 Pages) Texas Instruments – 25V N-Channel NexFET Power MOSFET

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CSD16415Q5
SLPS259A – DECEMBER 2011 – REVISED SEPTEMBER 2015
CSD16415Q5 25-V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultralow Q_g and Q_gd
• Very Low On-Resistance
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen-Free
2 Applications
• Point-of-Load Synchronous Buck Converter for
Applications in Networking, Telecom, and
Computing Systems
• Optimized for Synchronous FET Applications
3 Description
This 25 V, 1.3 mΩ, 5 x 6 mm SON NexFET™ power
MOSFET has been designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
Added text for spacing
Added text for spacing
6D
5D
P0094-01
Added text for spacing
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge, Total (4.5 V)
Q_gd
Gate Charge, Gate-to-Drain
R_DS(on)
Drain-to-Source On
Resistance
V_GS(th) Threshold Voltage
VALUE
25
21
5.2
V_GS = 4.5 V
V_GS = 10 V
1.5
1.5
0.99
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD16415Q5
Device Information⁽¹⁾
PACKAGE
MEDIA QTY
SON
5-mm × 6-mm
Plastic Package
13-inch
Reel
2500
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
Continuous Drain Current (Package
Limited)
VALUE
25
–12 to 16
100
I_D
Continuous Drain Current (Silicon
Limited), T_C = 25°C⁽¹⁾
Continuous Drain Current⁽¹⁾
I_DM
Pulsed Drain Current, T_A = 25°C⁽²⁾
Power dissipation⁽¹⁾
P_D
Power Dissipation, , T_C = 25°C
T_J,
Operating Junction and
T_stg
Storage Temperature
E_AS
Avalanche Energy, Single-Pulse
I_D = 100 A, L = 0.1 mH, R_G = 25 Ω
261
38
200
3.2
156
–55 to 150
500
UNIT
V
V
A
A
W
°C
mJ
(1) R_θJA = 40°C/W on 1 in² (6.45 cm²) Cu [2 oz. (0.071 mm
thick)] on 0.060 inch (1.52 mm) thick FR4 PCB.
(2) Max R_θJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%
R_DS(ON) vs V_GS
5
4.5
T_C = 25°C, I _D = 40 A
T_C = 125°C, I _D = 40 A
4
3.5
3
2.5
2
1.5
1
0.5
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
D007
1
12
I_D = 40 A
V_DS = 12.5 V
10
Gate Charge
8
6
4
2
0
0
10
20
30
40
50
60
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.