CSD16415Q5 Datasheet, PDF (1/12 Pages) Texas Instruments – N-Channel NexFET™ Power MOSFET

CSD16415Q5
www.ti.com
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16415Q5
SLPS259 – DECEMBER 2011
FEATURES
1
•2 Ultralow Qg and Qgd
• Very Low On-Resistance
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
V_DS
Q_g
Q_gd
r_DS(on)
V_GS(th)
PRODUCT SUMMARY
Drain-to-source voltage
25
Gate charge, total (4.5 V)
21
Gate charge, gate-to-drain
5.2
Drain-to-source on-resistance
Threshold voltage
V_GS = 4.5 V
V_GS = 10 V
1.5
V
nC
nC
1.5 mΩ
0.99 mΩ
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD16415Q5
SON 5-mm ×
6-mm plastic
package
13-inch
(33-cm)
reel
2500
Ship
Tape and
reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain-to-source voltage
V_GS Gate-to-source voltage
I_D
Continuous drain current, T_C = 25°C
Continuous drain current⁽¹⁾
I_DM Pulsed drain current, T_A = 25°C⁽²⁾
P_D
Power dissipation⁽¹⁾
T_J, Operating junction and storage temperature
T_STG range
E_AS
Avalanche energy, single-pulse
I_D = 100 A, L = 0.1 mH, R_G = 25 Ω
VALUE
25
+16/-12
100
38
200
3.2
–55 to 150
500
UNIT
V
V
A
A
A
W
°C
mJ
S3
D
G4
6D
5D
P0094-01
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
r_DS(ON) vs V_GS
I_D = 40A
T_C = 25°C
T_C = 125ºC
12345678
V_GS - Gate-to- Source Voltage - V
9 10
(1) R_θJA = 40°C/W on 1-in² (6.45-cm²) Cu [2 oz. (0.071-mm
thick)] on 0.060-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%
Gate Charge
12
I_D = 40A
10 ^VDS ^{= 12.5V}
8
6
4
2
0
0
10
20
30
40
50
60
Q_g − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated