CSD16414Q5 Datasheet, PDF (1/11 Pages) Texas Instruments – N-Channel NexFET™ Power MOSFET

CSD16414Q5
www.ti.com
SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16414Q5
FEATURES
1
•2 Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5mm × 6mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0094-01
PRODUCT SUMMARY
V_DS
Drain to Source Voltage
25
V
Q_g
Gate Charge Total (4.5V)
16.6
nC
Q_gd
Gate Charge Gate to Drain
4.4
nC
R_DS(on) Drain to Source On Resistance
V_GS = 4.5V
V_GS = 10V
2.1 mΩ
1.5 mΩ
V_GS(th) Threshold Voltage
1.6
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD16414Q5
SON 5 × 6 Plastic 13-inch
Package
reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 100A, L = 0.1mH, R_G = 25Ω
VALUE
25
+16 / –12
100
34
213
3.2
UNIT
V
V
A
A
A
W
–55 to 150 °C
500
mJ
(1) R_qJA = 39°C/W on 1in² Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300ms, duty cycle ≤2%"
R_DS(ON) vs V_GS
6
I_D = 30A
5
4
T_C = 125°C
3
2
1
T_C = 25°C
0
0
2
4
6
8
10
12
V_GS − Gate to Source Voltage − V
G006
12
I_D = 30A
10 ^VDS ^{= 12.5V}
Gate Charge
8
6
4
2
0
0
5 10 15 20 25 30 35 40
Q_g − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated