CSD16408Q5_11 Datasheet, PDF (1/11 Pages) Texas Instruments – The NexFET power MOSFET has been designed to minimize losses in power conversion applications.

CSD16408Q5
www.ti.com
SLPS228A – OCTOBER 2009 – REVISED SEPTEMBER 2010
N-Channel NexFET™ Power MOSFET
FEATURES
1
•2 Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
• Optimized for Control FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0094-01
16
14
12
10
8
6
4
2
0
0
r_DS(on) vs V_GS
I_D = 25A
T_C = 125°C
T_C = 25°C
2
4
6
8
10
V_GS − Gate to Source Voltage − V
12
G006
V_DS
Q_g
Q_gd
r_DS(on)
V_GS(th)
PRODUCT SUMMARY
Drain-to-source voltage
25
Gate charge, total (4.5 V)
6.7
Gate charge, gate-to-drain
1.9
Drain-to-source on-resistance
Threshold voltage
V_GS = 4.5 V
V_GS = 10 V
1.8
V
nC
nC
5.4 mΩ
3.6 mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD16408Q5
SON 5-mm × 6-mm
plastic package
13-inch
(33-cm)
reel
2500
Ship
Tape and
reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain-to-source voltage
V_GS Gate-to-source voltage
I_D
Continuous drain current, T_C = 25°C
Continuous drain current⁽¹⁾
I_DM Pulsed drain current, T_A = 25°C⁽²⁾
P_D
Power dissipation⁽¹⁾
T_J, Operating junction and storage temperature
T_STG range
E_AS
Avalanche energy, single-pulse
I_D = 23 A, L = 0.1 mH, R_G = 25 Ω
VALUE
25
–12 to 16
113
22
141
3.1
–55 to 150
126
UNIT
V
V
A
A
A
W
°C
mJ
(1) Typical R_qJA = 41°C/W on 1-inch² (6.45-cm²), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB.
(2) Pulse duration ≤300 ms, duty cycle ≤2%
put a break here is force notes closer to the table
put a break here is force notes closer to the table
GATE CHARGE
12
I_D = 25A
10 ^VDS ^{= 12.5V}
8
6
4
2
0
0
5
10
15
20
Q_g − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated