CSD16406Q3_15 Datasheet, PDF (1/13 Pages) Texas Instruments – N-Channel NexFET Power MOSFET

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CSD16406Q3
SLPS202B – AUGUST 2009 – REVISED DECEMBER 2015
CSD16406Q3 N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
• Point-of-Load Synchronous Buck Converter for
Applications in Networking, Telecom, and
Computing Systems
• Optimized for Control or Synchronous FET
Applications
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate to Drain
R_DS(on)
Drain-to-Source On-
Resistance
V_th
Threshold Voltage
TYPICAL VALUE
25
5.8
1.5
V_GS = 4.5 V
5.9
V_GS = 10 V
4.2
1.8
UNIT
V
nC
nC
mΩ
mΩ
V
DEVICE
CSD16406Q3
CSD16406Q3T
.
Ordering Information⁽¹⁾
MEDIA
QTY
PACKAGE
SHIP
13-Inch Reel 2500 _{SON 3.3 x 3.3 mm Tape and}
13-Inch Reel 250 ^{Plastic Package}
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 25 V, 4.2 mΩ, 3.3 mm × 3.3 mm SON
NexFET™ power MOSFET has been designed to
minimize losses in power conversion applications.
Top View
S
8D
S
7D
S
6D
D
G
5D
P0095-01
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
25
+16 / –12
60
UNIT
V
V
I_D
Continuous Drain Current (Silicon limited),
T_C = 25°C
79
A
Continuous Drain Current⁽¹⁾
19
I_DM Pulsed Drain Current⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
240
A
2.8
W
46
T_J, Operating Junction Temperature,
T_stg Storage Temperature
–55 to 150 °C
E_AS
Avalanche Energy, single pulse
I_D = 45 A, L = 0.1 mH, R_G = 25 Ω
101
mJ
(1) Typical R_θJA = 45°C/W on a 1 inch², 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
(2) Max R_θJC = 2.7°C/W, pulse duration ≤100 μs, duty cycle ≤1%
R_DS(on) vs V_GS
14
T_C = 25°C, I _D = 20 A
12
T_C = 125°C, I _D = 20 A
10
8
6
4
2
0
0
2
4
6
8 10 12 14 16
V_GS - Gate-To-Source Voltage (V)
D007
12
I_D = 10 A
V_DS = 12.5 V
10
Gate Charge
8
6
4
2
0
0
2
4
6
8
10
12
14
Q_g - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.