CSD16340Q3_16 Datasheet, PDF (1/14 Pages) Texas Instruments – CSD16340Q3 25-V N-Channel NexFET™ Power MOSFET

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CSD16340Q3
SLPS247E – DECEMBER 2009 – REVISED AUGUST 2014
CSD16340Q3 25-V N-Channel NexFET™ Power MOSFET
1 Features
•1 Optimized for 5 V Gate Drive
• Resistance Rated at V_GS =2.5 V
• Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
2 Applications
• Point of Load Synchronous Buck Converter for
Applications in Networking, Telecom, and
Computing Systems
• Optimized for Control or Synchronous FET
Applications
3 Description
This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™
power MOSFET is designed to minimize losses in
power conversion and optimized for 5 V gate drive
applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0095-01
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_th
Threshold Voltage
VALUE
25
6.5
1.2
V_GS = 2.5 V
6.1
V_GS = 4.5 V
4.3
V_GS = 8 V
3.8
0.85
UNIT
V
nC
nC
mΩ
mΩ
mΩ
V
Device
CSD16340Q3
CSD16340Q3T
.
Ordering Information⁽¹⁾
Media
Qty
Package
Ship
13-Inch Reel 2500 _{SON 3.3 x 3.3 mm Tape and}
7-Inch Reel 250 ^{Plastic Package}
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and
T_stg Storage Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 40 A, L = 0.1 mH, R_G = 25 Ω
VALUE
25
+10 / –8
60
21
115
3
UNIT
V
V
A
A
A
W
–55 to 150 °C
80
mJ
(1) Typical R_θJA = 39°C/W on 1in² Cu (2 oz.) on 0.060" thick FR4
PCB.
(2) Pulse width ≤300 μs, duty cycle ≤2%
R_DS(on) vs V_GS
16
14
I_D = 20A
12
10
8
T_C = 125°C
6
4
2
T_C = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS − Gate to Source Voltage − V
G006
1
Gate Charge
8
7
I_D = 20A
V_DS = 12.5V
6
5
4
3
2
1
0
0
2
4
6
8
10
Qg − Gate Charge − nC
12
G003
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.