CSD16327Q3_16 Datasheet, PDF (1/13 Pages) Texas Instruments – 25-V N-Channel NexFET Power MOSFET

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CSD16327Q3
SLPS371A – DECEMBER 2011 – REVISED SEPTEMBER 2016
CSD16327Q3 25-V N-Channel NexFET™ Power MOSFET
1 Features
•1 Optimized for 5-V Gate Drive
• Ultra-Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
2 Applications
• Point-of-Load Synchronous Buck Converter for
Applications in Networking, Telecom and
Computing Systems
• Optimized for Control or Synchronous FET
Applications
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
25
6.2
1.1
V_GS = 3 V
5
V_GS = 4.5 V
4
V_GS = 8 V
3.4
1.2
UNIT
V
nC
nC
mΩ
V
DEVICE
CSD16327Q3
CSD16327Q3T
.
Device Information⁽¹⁾
MEDIA
QTY
PACKAGE
13-Inch Reel
7-Inch Reel
2500
SON
3.30-mm × 3.30-mm
250 _{Plastic Package}
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm
NexFET™ power MOSFET has been designed to
minimize losses in power conversion and optimized
for 5-V gate drive applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0095-01
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
25
+10 / –8
60
UNIT
V
V
I_D
Continuous Drain Current (Silicon Limited),
T_C = 25°C
112
A
Continuous Drain Current⁽¹⁾
22
I_DM Pulsed Drain Current⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
240
A
2.8
W
74
T_J, Operating Junction Temperature,
T_stg Storage Temperature
–55 to 150 °C
E_AS
Avalanche Energy, Single Pulse
I_D = 50 A, L = 0.1 mH, R_G = 25 Ω
125
mJ
(1) Typical R_θJA = 45°C/W on 1-in² Cu (2 oz) on 0.06-in thick FR4
PCB.
(2) Max R_θJC = 1.7°C/W pulse width ≤100 μs, duty cycle ≤1%.
R_DS(on) vs V_GS
16
T_C = 25qC, I_D = 24 A
14
T_C = 125qC, I_D = 24 A
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
8
I_D = 24 A
7 VDS = 12.5 V
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Q_g - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.