CSD16327Q3 Datasheet, PDF (1/11 Pages) Texas Instruments – N-Channel NexFET™ Power MOSFET

CSD16327Q3
www.ti.com
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16327Q3
SLPS371 – DECEMBER 2011
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3mm x 3.3mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
• Optimized for Control or Synchronous FET
Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion and optimized
for 5V gate drive applications.
Top View
S1
S2
S3
D
G4
8D
7D
6D
5D
P0095-01
V_DS
Q_g
Q_gd
R_DS(on)
V_th
PRODUCT SUMMARY
Drain to Source Voltage
25
Gate Charge Total (4.5V)
6.2
Gate Charge Gate to Drain
1.1
Drain to Source On Resistance
Threshold Voltage
V_GS = 3V
V_GS = 4.5V
V_GS = 8V
1.2
V
nC
nC
5 mΩ
4
3.4
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD16327Q3
SON 3.3 × 3.3
Plastic Package
13-inch
reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 50A, L = 0.1mH, R_G = 25Ω
VALUE
25
+10 / –8
60
21
112
3
UNIT
V
V
A
A
A
W
–55 to 150 °C
125
mJ
(1) R_θJA = 45°C/W on 1in² Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300μs, duty cycle ≤2%
14
12
10
8
6
4
2
0
0
R_DS(ON) vs V_GS
I_D = 24A
T_C = 25°C
T_C = 125ºC
12345678
V_GS - Gate-to- Source Voltage - V
9 10
G001
Gate Charge
10
9
I_D =24A
V_DD = 12.5V
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Q_g - Gate Charge - nC (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated