CSD16325Q5_10 Datasheet, PDF (1/12 Pages) Texas Instruments – The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

CSD16325Q5
www.ti.com
SLPS218C – AUGUST 2009 – REVISED APRIL 2010
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16325Q5
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0094-01
V_DS
Q_g
Q_gd
R_DS(on)
V_GS(th)
PRODUCT SUMMARY
Drain to Source Voltage
25
Gate Charge Total (4.5V)
18
Gate Charge Gate to Drain
3.5
Drain to Source On Resistance
Threshold Voltage
V_GS = 3V
V_GS = 4.5V
V_GS = 8V
1.1
V
nC
nC
2.1 mΩ
1.7 mΩ
1.5 mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD16325Q5
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 100A, L = 0.1mH, R_G = 25Ω
VALUE
25
+10 / –8
100
33
200
3.1
UNIT
V
V
A
A
A
W
–55 to 150 °C
500
mJ
(1) Typical R_qJA = 38°C/W on 1-inch² (6.45-cm²), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2%
R_DS(on) vs V_GS
5
I_D = 30A
4
T_C = 125°C
3
2
1
T_C = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS − Gate to Source Voltage − V
G006
Gate Charge
10
9 ^ID ^{= 30A}
8 ^{VDS = 12.5V}
7
6
5
4
3
2
1
0
0
5 10 15 20 25 30 35 40
Q_g − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated