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CSD16323Q3 Datasheet, PDF (1/12 Pages) Texas Instruments – N-Channel NexFET™ Power MOSFETs
CSD16323Q3
www.ti.com
SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16323Q3
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3mm x 3.3mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
• Optimized for Control or Synchronous FET
Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion and optimized
for 5V gate drive applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0095-01
VDS
Qg
Qgd
RDS(on)
Vth
PRODUCT SUMMARY
Drain to Source Voltage
25
Gate Charge Total (4.5V)
6.2
Gate Charge Gate to Drain
1.1
Drain to Source On Resistance
Threshold Voltage
VGS = 3V
VGS = 4.5V
VGS = 8V
1.1
V
nC
nC
5.4 mΩ
4.4 mΩ
3.8 mΩ
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD16323Q3
SON 3.3 × 3.3
Plastic Package
13-inch
reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, single pulse
ID = 50A, L = 0.1mH, RG = 25Ω
VALUE
25
+10 / –8
60
21
112
3
UNIT
V
V
A
A
A
W
–55 to 150 °C
125
mJ
(1) RθJA = 43°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300μs, duty cycle ≤2%
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2011, Texas Instruments Incorporated