CSD16321Q5 Datasheet, PDF (1/12 Pages) Texas Instruments – N-Channel NexFET™ Power MOSFET

CSD16321Q5
www.ti.com
SLPS220B – AUGUST 2009 – REVISED MAY 2010
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16321Q5
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• SON 5mm × 6mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
V_DS
Q_g
Q_gd
R_DS(on)
V_GS(th)
PRODUCT SUMMARY
Drain to Source Voltage
25
Gate Charge Total (4.5V)
14
Gate Charge Gate to Drain
2.5
Drain to Source On Resistance
Threshold Voltage
V_GS = 3V
V_GS = 4.5V
V_GS = 8V
1.1
V
nC
nC
2.8 mΩ
2.1 mΩ
1.9 mΩ
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD16321Q5
SON 5 × 6 Plastic
Package
13-inch reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current(1)
VALUE
25
+10 / –8
100
31
UNIT
V
V
A
A
I_DM
P_D
T_J,
T_STG
E_AS
Pulsed Drain Current, T_A = 25°C(2)
Power Dissipation(1)
Operating Junction and Storage
Temperature Range
Avalanche Energy, single pulse
I_D = 66A, L = 0.1mH, R_G = 25Ω
200
A
3.1
W
–55 to 150 °C
218
mJ
(1) Typical R_qJA = 39°C/W on 1in² Cu (2 oz.) on 0.060" thick FR4
PCB.
(2) Pulse width ≤300ms, duty cycle ≤2%
R_DS(ON) vs V_GS
6
I_D = 25A
5
T_C = 125°C
4
3
2
T_C = 25°C
1
0
0 1 2 3 4 5 6 7 8 9 10
V_GS − Gate to Source Voltage − V
G006
Gate Charge
10
9
I_D = 25A
V_DS = 12.5V
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
Qg − Gate Charge − nC
30
35
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated