CSD15380F3 Datasheet, PDF (1/14 Pages) Texas Instruments – CSD15380F3 20-V N-Channel FemtoFET™ MOSFET

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CSD15380F3 20-V N-Channel FemtoFET™ MOSFET
CSD15380F3
SLPS579 – MAY 2016
1 Features
•1 Ultra-Low C_iSS and C_OSS
• Ultra-Low Q_g and Q_gd
• Ultra-Small Footprint
– 0.73 mm × 0.64 mm
• Ultra-Low Profile
– 0.35-mm Max Height
• Integrated ESD Protection Diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This 20-V, 990-mΩ, N-Channel FemtoFET™
MOSFET is designed and optimized to minimize the
footprint in many handheld and mobile applications.
Ultra-low capacitance improves switching speeds.
When used in data line applications, the low
capacitance minimizes noise coupling. This
technology is capable of replacing standard small
signal MOSFETs while providing a substantial
reduction in footprint size.
Text added for spacing
a
Text added for spacing
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on)
Drain-to-Source
On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
20
0.216
0.027
V_GS = 2.5 V
V_GS = 4.5 V
V_GS = 8 V
1.1
2220
1170
990
UNIT
V
nC
nC
mΩ
mΩ
mΩ
V
Device
CSD15380F3
CSD15380F3T
Ordering Information⁽¹⁾
Qty
Media
Package
3000
250
7-Inch Reel
7-Inch Reel
Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)
Ship
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C (unless otherwise stated)
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current⁽¹⁾
I_DM
Pulsed Drain Current⁽²⁾
P_D
Power Dissipation⁽¹⁾
Human Body Model (HBM)
V _{(ESD) Charged Device Model (CDM)}
VALUE
20
10
0.5
1.6
500
4
2
UNIT
V
V
A
A
mW
kV
kV
T_J,
Operating Junction and
T_stg Storage Temperature
–55 to 150 °C
(1) Typical R_θJA = 255°C/W on 1-in² (6.45-cm²), 2-oz
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4
PCB.
(2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
Typical Part Dimensions
0.35 mm
0.64 mm
0.73 mm
Top View
G
D
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.