CSD13385F5 Datasheet, PDF (1/14 Pages) Texas Instruments – 12-V N-Channel FemtoFET MOSFET

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CSD13385F5 12-V N-Channel FemtoFET™ MOSFET
CSD13385F5
SLPS612 – OCTOBER 2016
1 Features
•1 Low On Resistance
• Low Q_g and Q_gd
• Ultra-Small Footprint
– 1.53 mm × 0.77 mm
• Low Profile
– 0.35-mm Height
• Integrated ESD Protection Diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Industrial Load Switch Applications
• Optimized for General Purpose Switching
Applications
3 Description
This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET
technology is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing a significant
reduction in footprint size.
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Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
12
3.9
0.39
V_GS = 1.8 V
26
V_GS = 2.5 V
18
V_GS = 4.5 V
15
0.8
UNIT
V
nC
nC
mΩ
V
DEVICE
CSD13385F5
CSD13385F5T
Device Information⁽¹⁾
QTY
MEDIA
PACKAGE
3000
250
7-Inch Reel
Femto
1.53-mm × 0.77-mm
SMD Lead Less
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current⁽¹⁾
I_D
Continuous Drain Current⁽²⁾
I_DM
Pulsed Drain Current⁽¹⁾⁽³⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation⁽²⁾
VALUE
12
8
4.3
7.1
41
0.5
1.4
Human-Body Model (HBM)
4
V_{(ESD) Charged-Device Model (CDM)}
2
T_J,
Operating Junction,
T_stg Storage Temperature
–55 to 150
(1) Min Cu, typical R_θJA = 245°C/W.
(2) Max Cu, typical R_θJA = 90°C/W.
(3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
UNIT
V
V
A
A
W
kV
°C
Typical Part Dimensions
Top View
G
0.35 mm
S
0.77 mm
1.53 mm
D
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.