English
Language : 

CSD13380F3 Datasheet, PDF (1/14 Pages) Texas Instruments – 12-V N-Channel FemtoFET MOSFET
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD13380F3 12-V N-Channel FemtoFET™ MOSFET
CSD13380F3
SLPS593 – OCTOBER 2016
1 Features
•1 Low On Resistance
• Ultra-Low Qg and Qgd
• High Operating Drain Current
• Ultra-Small Footprint
– 0.73 mm × 0.64 mm
• Low Profile
– 0.35-mm Max Height
• Integrated ESD Protection Diode
– Rated > 3-kV HBM
– Rated > 2-kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing a substantial
reduction in footprint size.
.
.
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
12
0.91
0.15
VGS = 1.8 V
96
VGS = 2.5 V
73
VGS = 4.5 V
63
0.85
UNIT
V
nC
nC
mΩ
V
DEVICE
CSD13380F3
CSD13380F3T
Device Information(1)
QTY
MEDIA
PACKAGE
3000
250
Femto
7-Inch Reel 0.73 mm × 0.64 mm
Land Grid Array (LGA)
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C (unless otherwise stated)
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current(1)
ID
Continuous Drain Current(2)
IDM
Pulsed Drain Current(2)(3)
Power Dissipation(1)
PD
Power Dissipation(2)
VALUE
12
8
3.6
2.1
13.5
1.4
0.5
UNIT
V
V
A
A
W
Human-Body Model (HBM)
V(ESD) Charged-Device Model (CDM)
3
kV
2
TJ,
Operating Junction,
Tstg Storage Temperature
–55 to 150 °C
(1) Max Cu, typical RθJA = 90°C/W on 1-in2 (6.45-cm2), 2-oz
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4
PCB.
(2) Min Cu, typical RθJA = 255°C/W.
(3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
.
Typical Part Dimensions
0.35 mm
0.64 mm
0.73 mm
Top View
G
D
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.