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CSD13302W_16 Datasheet, PDF (1/12 Pages) Texas Instruments – CSD13302W 12 V N Channel NexFET™ Power MOSFET
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CSD13302W 12 V N Channel NexFET™ Power MOSFET
CSD13302W
SLPS535 – MARCH 2015
1 Features
•1 Ultra Low On Resistance
• Low Qg and Qgd
• Small Footprint 1 mm × 1 mm
• Low Profile 0.62 mm Height
• Pb Free
• RoHS Compliant
• Halogen Free
2 Applications
• Battery Management
• Load Switch
• Battery Protection
3 Description
This 14.6 mΩ, 12 V, N-Channel device is designed to
deliver the lowest on resistance and gate charge in a
small 1 x 1 mm outline with excellent thermal
characteristics and an ultra low profile.
Top View
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source
On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
12
6.0
2.1
VGS = 2.5 V
VGS = 4.5 V
1.0
21.2
14.6
UNIT
V
nC
nC
mΩ
mΩ
V
Device
CSD13302W
CSD13302WT
Ordering Information(1)
Qty
Media
Package
3000 7-Inch Reel
250 7-Inch Reel
1.0 mm × 1.0 mm
Wafer Level
Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS
VGS
ID
IDM
PD
TJ,
Tstg
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current (2)
Power Dissipation (3)
Operating Junction and
Storage Temperature Range
VALUE
12
±10
1.6
29
1.8
–55 to 150
UNIT
V
V
A
A
W
°C
(1) Device Operating at a temperature of 105ºC
(2) Min Cu Typ RθJA = 275ºC/W, Pulse width ≤100 μs, duty cycle
≤1%
(3) Max Cu Typ RθJA = 70ºC/W
RDS(on) vs VGS
35
TC = 25°C, I D = 1 A
30
TC = 125°C, I D = 1 A
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
VGS - Gate-To-Source Voltage (V)
D007
Gate Charge
5
4.5
ID = 1 A
VDS = 6 V
4
3.5
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
7
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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