CSD13202Q2 Datasheet, PDF (1/11 Pages) Texas Instruments – 12V N-Channel NexFET™ Power MOSFETs

CSD13202Q2
www.ti.com
12V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD13202Q2
SLPS313 – SEPTEMBER 2013
FEATURES
1
•2 Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
APPLICATIONS
• Optimized for Load Switch Applications
• Storage, Tablets, and Handheld Devices
• Optimized for Control FET Applications
• Point of Load Synchronous Buck Converters
DESCRIPTION
This 12V, 7.5mΩ NexFET™ power MOSFET has
been designed to minimize losses in power
conversion and load management applications. The
SON 2 x 2 offers excellent thermal performance for
the size of the package.
Top View
D1
D
D2
6D
5D
PRODUCT SUMMARY
V_DS
Drain to Source Voltage
12
V
Q_g
Gate Charge Total (4.5V)
5.1
nC
Q_gd
Gate Charge Gate to Drain
0.76
nC
R_DS(on) Drain to Source On Resistance
V_GS = 2.5V
V_GS = 4.5V
9.1 mΩ
7.5 mΩ
V_GS(th) Threshold Voltage
0.8
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD13202Q2
SON 2-mm × 2-mm
Plastic Package
7-Inch
Reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
Continuous Drain Current (Package Limit)
I_D
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 20A, L = 0.1mH, R_G = 25Ω
VALUE
12
±8
22
14.4
76
2.7
UNIT
V
V
A
A
A
W
–55 to 150 °C
20
mJ
(1) R_θJA = 45°C/W on 1in² Cu (2 oz.) on .060" thick FR4 PCB.
(2) Pulse duration 10μs, duty cycle ≤2%
18
16
14
12
10
8
6
4
2
0
0
G3
S
4S
P0108-01
R_DS(on) vs V_GS
T_C = 25°C,I _D = 5A
T_C = 125°C,I _D = 5A
1
2
3
4
5
6
7
8
V_GS - Gate-to- Source Voltage (V)
G001
4.5
I_D = 5A
4 _{VDS =6V}
3.5
GATE CHARGE
3
2.5
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Q_g - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated