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CSD13201W10_15 Datasheet, PDF (1/15 Pages) Texas Instruments – N-Channel NexFET Power MOSFET
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CSD13201W10
SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015
CSD13201W10 N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Qg and Qgd
• Small Footprint (1 mm × 1 mm)
• Low Profile 0.62-mm Height
• Pb-Free
• RoHS Compliant
• Halogen-Free
• Gate-Source Voltage Clamp
2 Applications
• Battery Management
• Load Switch
• Battery Protection
3 Description
This 12-V, 26-mΩ, N-Channel device is designed to
deliver the lowest on resistance and gate charge in
the smallest outline possible with excellent thermal
characteristics in an ultra-low profile.
Top View
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source On
Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
12
2.3
0.3
VGS = 1.8 V
38
VGS = 2.5 V
29
VGS = 4.5 V
26
0.8
UNIT
V
nC
nC
mΩ
mΩ
V
Device Information(1)
PART NUMBER
PACKAGE
MEDIA QTY
CSD13201W10
1 mm × 1 mm
Wafer Level Package
7-inch
reel
3000
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID
Continuous Drain Current,
TA = 25°C(1)
IDM
Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ,
Operating Junction and
Tstg
Storage Temperature Range
VALUE
12
±8
1.6
20.2
1.2
–55 to 150
UNIT
V
V
A
A
W
°C
(1) RθJA = 105°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤ 300 μs, duty cycle ≤ 2%
60
55
50
45
40
35
30
25
20
15
10
0
RDS(on) vs VGS
TC = 25°C Id = 1A
TC = 125ºC Id = 1A
1
2
3
4
5
6
7
8
VGS - Gate-to- Source Voltage - V
G001
5
ID = 1A
VDS = 6V
4
Gate Charge
3
2
1
0
0
0.5
1
1.5
2
Qg - Gate Charge - nC (nC)
2.5
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.