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CSD13201W10 Datasheet, PDF (1/13 Pages) Texas Instruments – N-Channel NexFET Power MOSFET
CSD13201W10
www.ti.com
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD13201W10
SLPS306 – MAY 2012
FEATURES
1
• Ultra Low Qg and Qgd
• Small Footprint 1mm × 1mm
• Low Profile 0.62mm Height
• Pb Free
• RoHS Compliant
• Halogen Free
• Gate-Source Voltage Clamp
PRODUCT SUMMARY
VDS
Drain to Source Voltage
12
V
Qg
Gate Charge Total (4.5V)
2.3
nC
Qgd
Gate Charge Gate to Drain
0.3
nC
RDS(on)
Drain to Source On
Resistance
VGS = 1.8V
38
mΩ
VGS = 2.5V
29
VGS = 4.5V
26
mΩ
VGS(th)
Threshold Voltage
0.8
V
APPLICATIONS
• Battery Management
• Load Switch
• Battery Protection
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile.
Figure 1. Top View
ORDERING INFORMATION
Device
Package
Media
Qty
CSD13201W10
1 × 1 Wafer Level
Package
7-inch reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
ID
Continuous Drain Current, TA =
25°C(1)
IDM
Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, TSTG
Operating Junction and Storage
Temperature Range
VALUE
12
±8
1.6
20.2
1.2
–55 to 150
UNIT
V
V
A
A
W
°C
(1) RθJA = 105°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤ 300 μs, duty cycle ≤ 2%
60
55
50
45
40
35
30
25
20
15
10
0
RDS(on) vs VGS
TC = 25°C Id = 1A
TC = 125ºC Id = 1A
1
2
3
4
5
6
7
8
VGS - Gate-to- Source Voltage - V
G001
5
ID = 1A
VDS = 6V
4
GATE CHARGE
3
2
1
0
0
0.5
1
1.5
2
Qg - Gate Charge - nC (nC)
2.5
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
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