CCBTLV3257MPWREP Datasheet, PDF (1/10 Pages) Texas Instruments – LOW-VOLTAGE 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER

SN74CBTLV3257-EP
www.ti.com ....................................................................................................................................................................................................... SCDS271 – MAY 2008
LOW-VOLTAGE 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER
FEATURES
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• Controlled Baseline
– One Assembly Site
– One Test Site
– One Fabrication Site
• Extended Temperature Performance of
–55°C to 125°C
• Enhanced Diminishing Manufacturing Sources
(DMS) Support
• Enhanced Product-Change Notification
• Qualification Pedigree ⁽¹⁾
(1) Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not limited
to, Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this component beyond specified
performance and environmental limits.
• 5-Ω Switch Connection Between Two Ports
• Rail-to-Rail Switching on Data I/O Ports
• I_off Supports Partial-Power-Down Mode
Operation
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
PW PACKAGE
(TOP VIEW)
S¹
1B1 ²
1B2 ³
1A ⁴
2B1 ⁵
2B2 ⁶
2A ⁷
GND ⁸
16 V_CC
15 OE
14 4B1
13 4B2
12 4A
11 3B1
10 3B2
9 3A
DESCRIPTION/ORDERING INFORMATION
The SN74CBTLV3257 is a 4-bit 1-of-2 high-speed FET multiplexer/demultiplexer. The low on-state resistance of
the switch allows connections to be made with minimal propagation delay.
The select (S) input controls the data flow. The FET multiplexers/demultiplexers are disabled when the
output-enable (OE) input is high.
This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging
current does not backflow through the device when it is powered down. The device has isolation during power
off.
To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated
On products compliant to MIL-PRF-38535, all parameters are
tested unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.