ADC128S052_14 Datasheet, PDF (1/26 Pages) Texas Instruments – 8-Channel, 200 kSPS to 500 kSPS, 12-Bit A/D Converter

ADC128S052
www.ti.com
SNAS333C – AUGUST 2005 – REVISED NOVEMBER 2010
ADC128S052/ADC128S052Q 8-Channel, 200 kSPS to 500 kSPS, 12-Bit A/D Converter
Check for Samples: ADC128S052
FEATURES
1
•23 ADC128S052Q is AECQ100 Qualified to
Grade1 and is manufactured on an Automotive
Grade Flow
• Eight input channels
• Variable power management
• Independent analog and digital supplies
• SPI™/QSPI™/MICROWIRE™/DSP compatible
• Packaged in 16-lead TSSOP
APPLICATIONS
• Automotive Navigation
• Portable Systems
• Medical Instruments
• Mobile Communications
• Instrumentation and Control Systems
DESCRIPTION
The ADC128S052 is a low-power, eight-channel CMOS 12-bit analog-to-digital converter specified for conversion
throughput rates of 200 kSPS to 500 kSPS. The converter is based on a successive-approximation register
architecture with an internal track-and-hold circuit. It can be configured to accept up to eight input signals at
inputs IN0 through IN7.
The output serial data is straight binary and is compatible with several standards, such as SPI™, QSPI,
MICROWIRE, and many common DSP serial interfaces.
The ADC128S052 may be operated with independent analog and digital supplies. The analog supply (V_A) can
range from +2.7V to +5.25V, and the digital supply (V_D) can range from +2.7V to V_A. Normal power consumption
using a +3V or +5V supply is 1.6 mW and 8.7 mW, respectively. The power-down feature reduces the power
consumption to 0.06 µW using a +3V supply and 0.25 µW using a +5V supply.
The ADC128S052/ADC128S052Q is packaged in a 16-lead TSSOP package. The ADC128S052 is
guaranteed over the extended industrial temperature range of −40°C to +105°C while the ADC128S052Q
is guaranteed to an AECQ100 Grade 1 automotive temperature range of −40°C to +125°C.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Conversion Rate
DNL (V_A = V_D = 5.0 V)
INL (V_A = V_D = 5.0 V)
Power Consumption
Table 1. Key Specifications
3V Supply
5V Supply
VALUE
200 kSPS to
500 kSPS
+1.3 / −0.9
±1.0
1.6
8.7
UNIT
LSB (max)
LSB (max)
mW (typ)
mW (typ)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
SPI is a trademark of Motorola, Inc..
2
All other trademarks are the property of their respective owners.
3
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2010, Texas Instruments Incorporated