LM4040_07 Datasheet, PDF (8/50 Pages) Zetex Semiconductors – Precision micropower shunt voltage references

LM4040
PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE
SLOS456J – JANUARY 2005 – REVISED SEPTEMBER 2006
LM4040x20I Electrical Characteristics
at industrial temperature range, full-range T_A = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
T_A
LM4040A20I
MIN TYP MAX
V_Z
Reverse breakdown voltage
∆V_Z
Reverse breakdown voltage
tolerance
I_Z = 100 µA
I_Z = 100 µA
25°C
2.048
25°C
–2
2
Full range –15
15
I_Z,min Minimum cathode current
25°C
Full range
45
75
80
α_VZ
DV_Z
DI_Z
I_Z = 10 mA
Average temperature coefficient
of reverse breakdown voltage
I_Z = 1 mA
I_Z = 100 µA
Reverse breakdown voltage
change with cathode current
change
I_Z,min < I_Z < 1 mA
1 mA < I_Z < 15 mA
25°C
25°C
Full range
25°C
25°C
Full range
25°C
Full range
±20
±15
±100
±15
0.3 0.8
1
2.5
6
8
Z_Z
Reverse dynamic impedance
I_Z = 1 mA, f = 120 Hz,
I_AC = 0.1 I_Z
25°C
e_N
Wideband noise
I_Z = 100 µA,
10 Hz ≤ f ≤ 10 kHz
25°C
0.3 0.8
35
Long-term stability of reverse
breakdown voltage
V_HYST Thermal hysteresis⁽¹⁾
t = 1000 h,
T_A = 25°C ± 0.1°C,
I_Z = 100 µA
∆T_A = –40°C to 125°C
120
0.08
(1) Thermal hysteresis is defined as V_Z,25°C (after cycling to –40°C) – V_Z,25°C (after cycling to 125°C).
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LM4040B20I
UNIT
MIN TYP MAX
2.048
V
–4.1
4.1
mV
–17
17
45
75
µA
80
±20
±15
ppm/°C
±100
±15
0.3 0.8
1
mV
2.5
6
8
0.3 0.8 Ω
35
µV_RMS
120
ppm
0.08
%
8
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