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TPS3610U18 Datasheet, PDF (7/26 Pages) Texas Instruments – BATTERY-BACKUP SUPERVISORS FOR RAM RETENTION
TPS3610U18, TPS3610T50
BATTERYĆBACKUP SUPERVISORS FOR RAM RETENTION
SLVS327B – DECEMBER 2000 – REVISED DECEMBER 2002
detailed description (continued)
chip-enable signal gating
The internal gating of chip-enable signals, CE, prevents erroneous data from corrupting CMOS RAM during an
undervoltage condition. The TPS3610 use a series transmission gate from CEIN to CEOUT. During normal
operation (reset not asserted), the CE transmission gate is enabled and passes all CE transitions. When reset
is asserted, this path becomes disabled, preventing erroneous data from corrupting the CMOS RAM. The short
CE propagation delay from CEIN to CEOUT enables TPS3610 devices to be used with most processors.
The CE transmission gate is disabled and CEIN is high-impedance (disable mode) while reset is asserted.
During a power-down sequence, when VDD crosses the reset threshold, the CE transmission gate is disabled
and CEIN immediately becomes high impedance if the voltage at CEIN is high. If CEIN is low while reset is
asserted, the CE transmission gate is disabled at the same time CEIN goes high, or 15 µs after RESET asserts,
whichever occurs first. This allows the current write cycle to complete during power-down. When the CE
transmission gate is enabled, the impedance of CEIN appears as a resistor in series with the load at CEOUT.
The overall device propagation delay through the CE transmission gate depends on VOUT, the source
impedance of the device connected to CEIN and the load at CEOUT. To achieve minimum propagation delay,
the capacitive load at CEOUT should be minimized, and a low-output-impedance driver should be used.
During disable mode, the transmission gate is off and an active pullup connects CEOUT to VOUT. The pullup
turns off when the transmission gate is enabled.
CEIN
CEOUT
RESET
t
15 µs
t
t
Figure 2. Chip-Enable Timing
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