CSD18535KCS_15 Datasheet, PDF (6/11 Pages) Texas Instruments – CSD18535KCS 60 V N-Channel NexFET Power MOSFET

CSD18535KCS
SLPS531 – MARCH 2015
Typical MOSFET Characteristics (continued)
(T_A = 25°C unless otherwise stated)
1000
500
100
100
10
www.ti.com
T_C = 25G C
T_C = 125G C
1
DC
100 µs
10 ms
10 µs
1 ms
0.1
10
0.1
1
10
100
1000
0.01
0.1
1
V_DS - Drain-to-Source Voltage (V)
D010
T_AV - Time in Avalanche (ms)
D011
Single Pulse, Max R_θJC = 0.5°C/W
Figure 10. Maximum Safe Operating Area
240
Figure 11. Single Pulse Unclamped Inductive Switching
200
160
120
80
40
0
-50 -25 0 25 50 75 100 125 150 175 200
T_C - Case Temperature (°C)
D012
Figure 12. Maximum Drain Current vs Temperature
6
Submit Documentation Feedback
Product Folder Links: CSD18535KCS
Copyright © 2015, Texas Instruments Incorporated