CSD17573Q5B_15 Datasheet, PDF (6/15 Pages) Texas Instruments – CSD17573Q5B 30 V N-Channel NexFET Power MOSFETs

CSD17573Q5B
SLPS492A – JUNE 2014 – REVISED FEBRUARY 2015
Typical MOSFET Characteristics (continued)
(T_A = 25°C unless otherwise stated)
2
V_GS = 4.5V
1.8
V_GS = 10V
1.6
1.4
1.2
1
0.8
0.6
0.4
−75 −50 −25 0 25 50 75 100 125 150 175
T_C - Case Temperature (ºC)
G001
I_D = 35 A
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100
T_C = 25°C
10
T_C = 125°C
1
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
V_SD − Source-to-Drain Voltage (V)
G001
Figure 8. Normalized On-State Resistance vs Temperature
5000
1000
10us
1ms
DC
100us
10ms
Figure 9. Typical Diode Forward Voltage
100
100
10
1
0.1
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
Single Pulse, Max R_θJC = 0.8°C/W
100
G001
T_C = 25ºC
T_C = 125ºC
10
0.01
0.1
1
T_AV - Time in Avalanche (mS)
G001
Figure 10. Maximum Safe Operating Area
120
Figure 11. Single Pulse Unclamped Inductive Switching
100
80
60
40
20
0
−50 −25 0 25 50 75 100 125 150 175 200
T_C - Case Temperature (ºC)
G001
Figure 12. Maximum Drain Current vs Temperature
6
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