BQ24160 Datasheet, PDF (6/44 Pages) Texas Instruments – 2.5A, Dual-Input, Single Cell Switchmode Li-Ion Battery Charger with Power Path

bq24160, bq24161
bq24163, bq24168
SLUSAO0A – NOVEMBER 2011 – REVISED MARCH 2012
www.ti.com
ELECTRICAL CHARACTERISTICS (Continued)
Circuit of Figure 23, V_SUPPLY = V_USB or V_IN (whichever is supplying the IC), V_UVLO < V_SUPPLY < V_OVP and V_SUPPLY > V_BAT+V_SLP,
T_J = -40°C – 125°C and T_J = 25ºC for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
INPUT CURRENT LIMITING
I_{IN_USB}
Input current limit threshold (USB input)
I_{IN_IN}
V_{IN_DPM}
Input current limit threshold (IN input)
Input based DPM threshold range
I_USBLIM = USB100
I_USBLIM = USB500
USB charge mode, V_USB = 5V,
DC Current pulled from SW
IUSBLIM = USB150
I_USBLIM = USB900
I_USBLIM = USB800
I_USBLIM = 1.5A
IN charge mode, V_IN = 5V,
DC Current pulled from SW
I_INLIM = 1.5A
I_INLIM = 2.5A
Charge mode, programmable via I²C, both inputs
90
450
135
800
700
1250
1.35
2.3
4.2
95
475
142.5
850
750
1400
1.5
2.5
100
500
150
mA
900
800
1500
1.65
A
2.8
4.76
V
V_{IN_DPM} threshold accuracy
VDRV BIAS REGULATOR
–2
+2%
V_DRV
Internal bias regulator voltage
I_DRV
DRV output current
V_{DO_DRV}
DRV Dropout voltage (V_SUPPLY – V_DRV)
STATUS OUTPUT (STAT, INT)
V_SUPPLY > 5.45V
I_SUPPLY = 1A, V_SUPPLY = 5V, I_DRV = 10mA
5
5.2
5.45
V
10
mA
450
mV
V_OL
Low-level output saturation voltage
I_IH
High-level leakage current
PROTECTION
I_O = 10mA, sink current
V_STAT = V_INT = 5V
0.4
V
1
µA
V_UVLO
V_{UVLO_HYS}
V_SLP
V_{SLP_EXIT}
IC active threshold voltage
IC active hysteresis
Sleep-mode entry threshold, V_SUPPLY-V_BAT
Sleep-mode exit hysteresis
Deglitch time for supply rising above V_SLP+V_{SLP_EXIT}
V_{BAD_SOURCE} Bad source detection threshold
V_IN rising
V_IN falling from above V_UVLO
2.0V ≤V_BAT ≤V_BATREG, V_IN falling
2.0V ≤V_BAT ≤V_BATREG
Rising voltage, 2mV over drive, t_RISE = 100ns
3.6
3.8
120
150
0
40
40
100
30
V_{IN_DPM}
– 80 mV
4
V
mV
100
mV
175
mV
ms
V
Deglitch on bad source detection
32
ms
V_OVP
Input supply OVP threshold voltage
V_OVP(HYS)
V_BOVP
V_BATUVLO
I_LIMIT
T_SHTDWN
V_OVP hysteresis
Battery OVP threshold voltage
V_BOVP hysteresis
Battery undervoltage lockout threshold
Cycle-by-cycle current limit
Thermal trip
Thermal hysteresis
USB, V_USB Rising
IN, V_IN Rising (bq24160/1/3)
IN, V_IN Rising (bq24168)
Supply falling from V_OVP
V_BAT threshold over V_OREG to turn off charger during charge
Lower limit for V_BAT falling from above V_BOVP
V_BAT rising, 100mV hysteresis
V_SYS shorted
6.3
10.3
6.3
1.025 ×
V_BATREG
4.1
6.5
10.5
6.5
100
1.05 ×
V_BATREG
1
2.5
4.9
165
10
6.7
10.7
6.7
1.075 ×
V_BATREG
5.6
V
mV
V
% of
V_BATREG
V
A
°C
T_REG
Thermal regulation threshold
Safety timer accuracy
Charge current begins to cut off
(bq24160/1/3 Only)
–20%
120
°C
20%
PWM
Internal top reverse blocking MOSFET on-resistance
Internal top N-channel Switching MOSFET on-
resistance
I_{IN_LIMIT} = 500mA, Measured from USB to PMIDU
I_{IN_LIMIT} = 500mA, Measured from IN to PMIDI
Measured from PMIDU to SW
Measured from PMIDI to SW
95
175
mΩ
45
80
100
175
mΩ
65
110
Internal bottom N-channel MOSFET on-resistance
Measured from SW to PGND
65
115
mΩ
f_OSC
D_MAX
D_MIN
Oscillator frequency
Maximum duty cycle
Minimum duty cycle
1.35
1.50
1.65 MHz
95%
0%
6
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