BQ2083-V1P2 Datasheet, PDF (6/55 Pages) Texas Instruments – SBS-COMPLIANT GAS GAUGE IC FOR USE WITH THE bp29311

bq2083-V1P2
SLUS573 − JULY 2003
www.ti.com
SMBUS TIMING SPECIFICATIONS
VDD = 3.0 V to 3.6 V, TA = −20°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
fSMB
fMAS
tBUF
thd(STA)
tsu(STA)
tsu(STO)
thd(DAT)
SMBus operating frequency
SMBus master clock frequency
Bus free time between start and stop
Hold time after (repeated) start
Repeated start setup time
Stop setup time
Data hold time
Slave mode, SMBC 50% duty cycle
Master mode, no clock low slave extend
Receive mode
Transmit mode
10
51.2
4.7
4.0
4.7
4.0
0
300
100 kHz
kHz
µs
µs
µs
µs
ns
tsu(DAT)
tTIMEOUT
tlow
Data setup time
Error signal/detect
Clock low period
See Note 1
250
ns
25
35 ms
4.7
µs
thigh
Clock high period
See Note 2
4.0
50 µs
tlow(SEXT)
Cumulative clock low slave extend time
See Note 3
25 ms
tlow(MEXT)
Cumulative clock low master extend time See Note 4
10 ms
tf
Clock/data fall time
See Note 5
300 ns
tr
Clock/data rise time
See Note 6
1000 ns
(1) _{The bq2083−V1P2 times out when any clock low exceeds tTIMEOUT}
(2) _{thigh Max. is minimum bus idle time. SMBC = 1 for t > 50 µs causes reset of any transaction involving bq2083−V1P2 that is in progress.}
(3) _{tlow(SEXT) is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop.}
(4) _{tlow(MEXT) is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop.}
(5) _{Rise time tr = (VILMAX − 0.15 V) to (VIHMIN + 0.15 V).}
(6) _{Fall time tf = 0.9 VDD to (VILMAX − 0.15 V).}
DATA FLASH MEMORY SWITCHING CHARACTERISTICS
VDD = 3.0 V to 3.6 V, TA = −20°C to 85°C (unless otherwise noted)
t(RETENSION)
PARAMETER
Data retention
Flash programming write-cycles
TEST CONDITIONS
See Note 1
See Note 1
t(WORDPROG) Word programming time
I(DDPROG)
Flash-write supply current
(1) _{Specified by design. Not production tested.}
See Note 1
See Note 1
Register Backup
PARAMETER
I(RBI)
RBI data-retention input current (see Note 1)
V(RBI)
RBI data-retention voltage
(1) _{Specified by design. Not production tested.}
TEST CONDITIONS
VRB > 3.0 V, VDD < VIT
MIN TYP MAX UNIT
10
Years
105
Cycles
2 ms
14
16 mA
MIN TYP MAX UNIT
10 100 nA
1.3
V
6