TPS2834 Datasheet, PDF (5/15 Pages) Texas Instruments – SYNCHRONOUS-BUCK MOSFET DRIVERS WITH DEADTIME CONTROL

TPS2834, TPS2835
SYNCHRONOUS-BUCK MOSFET DRIVERS
WITH DEADTIME CONTROL
SLVS223 – NOVEMBER 1999
electrical characteristics over recommended operating virtual junction temperature range,
V_CC = 6.5 V, ENABLE = High, C_L = 3.3 nF (unless otherwise noted) (continued)
output drivers
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
V(BOOT) – V(BOOTLO) = 4.5 V,
V(HIGHDR) = 4 V
0.7 1.1
High-side sink
(see Note 3)
Duty cycle < 2%,
tpw < 100 µs
(see Note 2)
V(BOOT) – V(BOOTLO) = 6.5 V,
V(HIGHDR) = 5 V
1.1 1.5
A
V(BOOT) – V(BOOTLO) = 12 V,
V(HIGHDR) = 10.5 V
2 2.4
V(BOOT) – V(BOOTLO) = 4.5 V,
V(HIGHDR) = 0.5V
1.2 1.4
Peak output current
High-side source
(see Note 3)
Duty cycle < 2%,
tpw < 100 µs
(see Note 2)
V(BOOT) – V(BOOTLO) = 6.5 V,
V(HIGHDR) = 1.5 V
1.3 1.6
A
V(BOOT) – V(BOOTLO) = 12 V,
V(HIGHDR) = 1.5 V
2.3 2.7
Low-side sink
(see Note 3)
Duty cycle < 2%,
tpw < 100 µs
(see Note 2)
VCC = 4.5 V, V(LOWDR) = 4 V
VCC = 6.5 V, V(LOWDR) = 5 V
VCC = 12 V, V(LOWDR) = 10.5 V
1.3 1.8
2 2.5
3 3.5
A
Low-side source
(see Note 3)
Duty cycle < 2%,
tpw < 100 µs
(see Note 2)
VCC = 4.5 V, VLOWDR)) = 0.5V
VCC = 6.5 V, V(LOWDR)) = 1.5 V
VCC = 12 V, V(LOWDR0) = 1.5 V
1.4 1.7
2 2.4
2.5
3
A
V(BOOT) – V(BOOTLO) = 4.5 V,
V(HIGHDR)= 0.5 V
5
High-side sink (see Note 3)
V(BOOT) – V(BOOTLO) = 6.5 V,
V(HIGHDR) = 0.5 V
5Ω
V(BOOT) – V(BOOTLO) = 12 V,
V(HIGHDR) = 0.5 V
5
V(BOOT) – V(BOOTLO) = 4.5 V,
V(HIGHDR) = 4 V
75
Output resistance
High-side source (see Note 3)
V(BOOT) – V(BOOTLO) = 6.5 V,
V(HIGHDR)= 6 V
75 Ω
V(BOOT) – V(BOOTLO) = 12 V,
V(HIGHDR) =11.5 V
75
V(DRV) = 4.5 V, V(LOWDR)= 0.5 V
9
Low-side sink (see Note 3)
V(DRV) = 6.5 V, V(LOWDR) = 0.5 V
7.5 Ω
V(DRV) = 12 V, V(LOWDR) = 0.5 V
6
V(DRV) = 4.5 V, V(LOWDR) = 4 V
75
Low-side source (see Note 3)
V(DRV) = 6.5 V, V(LOWDR)= 6 V
75 Ω
V(DRV) = 12 V, V(LOWDR) = 11.5 V
75
NOTES:
2: Ensured by design, not production tested.
3. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
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