STD60NF3LL_06 Datasheet, PDF (5/13 Pages) Texas Instruments – N-channel 30V - 0.0075Ω - 60A - DPAK STripFET™ II Power MOSFET

STD60NF3LL
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 60A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 60A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 15V, T_j = 150°C
Reverse recovery current (see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
65
105
3.4
Max. Unit
60
A
240 A
1.2 V
ns
nC
A
5/13