TLV2341 Datasheet, PDF (48/51 Pages) Texas Instruments – LinCMOSE PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

TLV2341, TLV2341Y
LinCMOS™ PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
APPLICATION INFORMATION
input characteristics (continued)
–
VI
+
VI
VO
–
+
VO
VI
–
+
VO
(a) NONINVERTING AMPLIFIER
(b) INVERTING AMPLIFIER
(c) UNITY-GAIN AMPLIFIER
Figure 101. Guard-Ring Schemes
noise performance
The noise specifications in operational amplifiers circuits are greatly dependent on the current in the first-stage
differential amplifier. The low input bias-current requirements of the TLV2341 results in a very low noise current,
which is insignificant in most applications. This feature makes the device especially favorable over bipolar
devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise
currents.
feedback
Operational amplifier circuits nearly always
employ feedback, and since feedback is the first
prerequisite for oscillation, caution is appropriate.
Most oscillation problems result from driving
capacitive loads and ignoring stray input
–
capacitance. A small-value capacitor connected
+
in parallel with the feedback resistor is an effective
remedy (see Figure 102). The value of this
capacitor is optimized empirically.
electrostatic-discharge protection
The TLV2341 incorporates an internal electro- ^{Figure 102. Compensation for Input Capacitance}
static-discharge (ESD)-protection circuit that
prevents functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care
should be exercised, however, when handling these devices as exposure to ESD may result in the degradation
of the device parametric performance. The protection circuit also causes the input bias currents to be
temperature dependent and have the characteristics of a reverse-biased diode.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLV2341 inputs
and output are designed to withstand – 100-mA surge currents without sustaining latch-up; however, techniques
should be used to reduce the chance of latch-up whenever possible. Internal protection diodes should not by
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