MSP430F2274-EP_11 Datasheet, PDF (48/80 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

MSP430F2274-EP
SLAS614D – SEPTEMBER 2008 – REVISED MAY 2011
www.ti.com
Operational Amplifier (OA) Feedback Network, Inverting Amplifier Mode (OAFCx = 6) –
Electrical Characteristics⁽¹⁾
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
OAFBRx = 1
T_A
V_CC
–55°C to 125°C
MIN
-0.385
TYP
–0.335
OAFBRx = 2
–55°C to 125°C
-1.023 –1.002
OAFBRx = 3
–55°C to 125°C
-1.712 –1.668
G
Gain
OAFBRx = 4
–55°C to 125°C 2.2 V/3 V
-3.10
–3.00
OAFBRx = 5
–55°C to 125°C
-4.51
–4.33
OAFBRx = 6
–55°C to 125°C
-7.37
–6.97
OAFBRx = 7
–55°C to 125°C
-16.6
–14.8
THD
Total harmonic
distortion/nonlinearity
All gains
2.2 V
–60
3V
–70
t_Settle
Settling time⁽²⁾
All power modes
–55°C to 125°C 2.2 V/3 V
7
MAX UNIT
-0.305
-0.979
-1.624
-2.90
-4.15
-6.57
-13.1
dB
12 μs
(1) This includes the 2 OA configuration "inverting amplifier with input buffer". Both OA needs to be set to the same power mode OAPMx.
(2) The settling time specifies the time until an ADC result is stable. This includes the minimum required sampling time of the ADC. The
settling time of the amplifier itself might be faster.
Flash Memory – Electrical Characteristics⁽¹⁾
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST
T_A
CONDITIO
NS
V_CC
MIN TYP MAX UNIT
V_{CC(PGM/ERASE)}
f_FTG
I_PGM
I_ERASE
t_CPT
t_CMErase
t_Retention
t_Word
t_{Block, 0}
t_{Block, 1-63}
t_{Block, End}
Program and erase supply voltage
Flash timing generator frequency
Supply current from V_CC during program
Supply current from V_CC during erase
Cumulative program time⁽²⁾
Cumulative mass erase time
Program/Erase endurance
Data retention duration⁽³⁾
Word or byte program time
Block program time for 1^st byte or word
Block program time for each additional
byte or word
Block program end-sequence wait time
T_J = 25°C
(4)
(4)
(4)
(4)
t_{Mass Erase}
Mass erase time
(4)
t_{Seg Erase}
Segment erase time
(4)
–55°C to 125°C
–55°C to 125°C
–55°C to 125°C
–55°C to 125°C
–55°C to 125°C
–55°C to 125°C
–55°C to 125°C
2.2 V/3.6 V
2.2 V/3.6 V
2.2 V/3.6 V
2.2 V/3.6 V
2.2
3.6 V
257
476 kHz
1
5 mA
1 10.5 mA
10 ms
20
10⁴ 10⁵
ms
cycles
100
years
30
t_FTG
25
t_FTG
18
t_FTG
6
1059
3
t_FTG
t_FTG
4819
t_FTG
(1) Additional Flash retention documentation located in application report (SLAA392).
(2) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(3) To test the flash data retention at various temperatures we make use of accelerated tests on the flash with 500-Hours Baking Time at
250°C. These tests are wholly based on Arrhenius law and equation.
(4) These values are hardwired into the Flash Controller's state machine (t_FTG = 1/f_FTG).
RAM – Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
V_(RAMh)
PARAMETER
RAM retention supply voltage ⁽¹⁾
TEST CONDITIONS
CPU halted
T_A
–55°C to 125°C
MIN MAX UNIT
1.6
V
(1) This parameter defines the minimum supply voltage V_CC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
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