TPS65058 Datasheet, PDF (4/22 Pages) Texas Instruments – 2.25 MHz Dual STEP DOWN CONVERTER WITH 3 LOW-INPUT VOLTAGE LDOs

TPS65058
SLVS851 – MAY 2008 ........................................................................................................................................................................................................ www.ti.com
ELECTRICAL CHARACTERISTICS
V_cc = VINDCDC1/2 = 3.6V, EN = V_cc, MODE = GND, L = 2.2µH, C_OUT = 22µF, T_A = –40°C to 85°C typical values
are at T_A = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN TYP MAX
SUPPLY CURRENT
V_cc
Input voltage range
One converter, I_OUT = 0 mA.PFM mode enabled (Mode = GND)
device not switching,
EN_DCDC1 = Vin OR EN_DCDC2 = Vin;
EN_LDO1= EN_LDO2 = EN_LDO3 = GND
2.5
6.
20
30
I_Q
Operating quiescent current
Total current into V_CC, VINDCDC1/2,
VINLDO1, VINLDO2/3
Two converters, I_OUT = 0 mA, PFM mode enabled (Mode = 0)
device not switching,
EN_DCDC1 = Vin AND EN_DCDC2 = Vin;
EN_LDO1 = EN_LDO2 = EN_LDO3 = GND
32
40
One converter, I_OUT = 0 mA, PFM mode enabled (Mode = GND)
device not switching,
EN_DCDC1 = Vin OR EN_DCDC2 = Vin;
EN_LDO1 = EN_LDO2 = EN_LDO3 = Vin
145
210
One converter, I_OUT = 0 mA,
Switching with no load (Mode = Vin),
PWM operation EN_DCDC1 = Vin OR EN_DCDC2 = Vin;
0.85
EN_LDO1 = EN_LDO2 = EN_LDO3 = GND
I_Q
Operating quiescent current into V_{CC Two converters, IOUT = 0 mA,}
Switching with no load (Mode = Vin),
PWM operation EN_DCDC1 = Vin AND EN_DCDC2 = Vin;
1.25
EN_LDO1 = EN_LDO2 = EN_LDO3 = GND
I_(SD)
Shutdown current
EN_DCDC1 = EN_DCDC2 = GND
EN_LDO1 = EN_LDO2 = EN_LDO3 = GND
9
12
V_(UVLO)
Undervoltage lockout threshold for
DCDC converters and LDOs
Voltage at V_CC
1.8
2
EN_DCDC1, EN_DCDC2, EN_LDO1, EN_LDO2, EN_LDO3, MODE
High-level input voltage
V_IH
MODE, EN_DCDC1, EN_DCDC2,
EN_LDO1, EN_LDO2, EN_LDO3,
DEF,DEF_LDO,DEF_DCDC2
1.2
V_CC
Low-level input voltage
V_IL
MODE, EN_DCDC1, EN_DCDC2,
EN_LDO1, EN_LDO2, EN_LDO3,
DEF_LDO, DEF_DCDC2
0
0.4
Input bias current
I_IN
MODE, EN_DCDC1, EN_DCDC2,
EN_LDO1, EN_LDO2, EN_LDO3,
MODE = GND or VIN
DEF_LDO, DEF_DCDC2
0.01
1
POWER SWITCH
r_DS(on)
P-channel MOSFET on DCDC1,
resistance
DCDC2
VINDCDC1/2 = 3.6V
VINDCDC1/2 = 2.5V
250
350
380
500
I_{LD_PMOS}
r_DS(on)
P-channel leakage current
N-channel MOSFET on DCDC1,
resistance
DCDC2
V_(DS) = 6V
VINDCDC1/2 = 3.6V
VINDCDC1/2 = 2.5V
1
180
250
250
I_{LK_NMOS}
I_(LIMF)
N-channel leakage current
Forward Current Limit
PMOS (High-Side) and
NMOS (Low side)
DCDC1
DCDC2
V_(DS) = 6V
2.5V ≤ V_IN ≤ 6V
7
10
1.19
1.4 1.65
0.85
1.0 1.15
T_SD
Thermal shutdown
Increasing junction temperature
150
Thermal shutdown hysteresis
Decreasing junction temperature
20
OSCILLATOR
f_SW
Oscillator frequency
2.025 2.25 2.475
UNIT
V
µA
µA
µA
mA
mA
µA
V
V
V
µA
mΩ
µA
mΩ
µA
A
°C
°C
MHz
4
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