TPS54610 Datasheet, PDF (4/16 Pages) Texas Instruments – 3-V TO 6-V INPUT, 6-A OUTPUT SYNCHRONOUS BUCK PWM SWITCHER WITH INTEGRATED FETs

TPS54610
SLVS398D − JUNE 2001 − REVISED JULY 2003
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range unless otherwise noted
PARAMETER
TEST CONDITIONS
ERROR AMPLIFIER
Error amplifier open loop voltage gain
Error amplifier unity gain bandwidth
1 kΩ COMP to AGND(1)
Parallel 10 kΩ, 160 pF COMP to AGND(1)
Error amplifier common mode input voltage
range
Powered by internal LDO(1)
Input bias current, VSENSE
VSENSE = Vref
Output voltage slew rate (symmetric), COMP
PWM COMPARATOR
PWM comparator propagation delay time,
PWM comparator input to PH pin (excluding
deadtime)
10-mV overdrive(1)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
Enable hysteresis voltage, SS/ENA
Falling edge deglitch, SS/ENA(1)
Internal slow-start time
Charge current, SS/ENA
SS/ENA = 0 V
Discharge current, SS/ENA
POWER GOOD
SS/ENA = 0.2 V, VI = 2.7 V
Power good threshold voltage
Power good hysteresis voltage(1)
Power good falling edge deglitch(1)
VSENSE falling
Output saturation voltage, PWRGD
Leakage current, PWRGD
CURRENT LIMIT
Current limit trip point
Current limit leading edge blanking time(1)
Current limit total response time(1)
I(sink) = 2.5 mA
VI = 5.5 V
VI = 3 V Output shorted(1)
VI = 6 V Output shorted(1)
THERMAL SHUTDOWN
Thermal shutdown trip point(1)
Thermal shutdown hysteresis(1)
OUTPUT POWER MOSFETS
rDS(on) Power MOSFET switches
VI = 6 V(4)
VI = 3 V(4)
(1) _{Specified by design}
(2) _{Static resistive loads only}
(3) _{Specified by the circuit used in Figure 10}
(4) _{Matched MOSFETs low-side rDS(on) production tested, high-side rDS(on) specified by design}
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MIN TYP MAX UNIT
90 110
3
5
dB
MHz
0
VBIAS V
60
1.0 1.4
250 nA
V/µs
70
85 ns
0.82 1.20
0.03
2.5
2.6 3.35
3
5
2.0 2.3
1.40 V
V
µs
4.1 ms
8 µA
4.0 mA
90
%Vref
3
%Vref
35
µs
0.18
0.3 V
1 µA
7.2
10
A
10
12
100
ns
200
ns
135 150
10
165 °C
°C
26
47
mΩ
36
65
4