DS90LV019TMX Datasheet, PDF (4/12 Pages) Texas Instruments – LVDS Signaling, 3.3V or 5.0V operation, Low power CMOS design

DC Electrical Characteristics
T_A = −40˚C to +85˚C unless otherwise noted, V_CC = 5.0 ± 0.5V. (Notes 2, 3)
Symbol
Parameter
Conditions
DIFFERENTIAL DRIVER CHARACTERISTICS
V_OD
Output Differential Voltage
R _L = 100Ω (Figure 1)
∆V_OD
V_OD Magnitude Change
V_OS
Offset Voltage
∆V_OS
Offset Magnitude Change
I_OZD
TRI-STATE Leakage
V_OUT = V_CC or GND, DE = 0V
I_OXD
Power-Off Leakage
V_OUT = 5.5V or GND, V_CC = 0V
I_OSD
Output Short Circuit Current
V_OUT = 0V, DE = V_CC
DIFFERENTIAL RECEIVER CHARACTERISTICS
V_OH
Voltage High
VID = +100 mV I_OH = −400 µA
Inputs Open
V_OL
Voltage Output Low
I_OL = 2.0 mA, VID = −100 mV
I_OS
Output Short Circuit Current
V_OUT = 0V
V_TH
Input Threshold High
V_TH
Input Threshold Low
I_IN
Input Current
V_IN = +2.4V or 0V, V_CC = 5.5V or
0V
DEVICE CHARACTERISTICS
V_IH
V_IL
I_IH
I_IL
V_CL
I_CCD
I_CCR
I_CCZ
I_CC
C_{D output}
Minimum Input High Voltage
Maximum Input Low Voltage
Input High Current
Input Low Current
Input Diode Clamp Voltage
Power Supply Current
Capacitance
V_IN = V_CC or 2.4 V
V_IN = GND or 0.4V
I_CLAMP = −18 mA
DE = RE = V_CC
DE = RE = 0V
DE = 0V, RE = V_CC
DE = V_CC, RE = 0V
C_{R input}
Capacitance
Pin
Min Typ Max Units
DO+,
250
360
450
mV
DO−
6
60
mV
1
1.25 1.8
V
5
60
mV
−10
±1
+10
µA
−10
±1
+10
µA
−10
−6
−4
mA
R_OUT
4.3
5.0
V
4.3
5.0
V
0.1
0.4
V
−150 −75
−40
mA
RI+,
RI− _−100
+100 mV
mV
−15
±1
+15
µA
D_IN,
DE ,RE
2.0
GND
V_CC
V
0.8
V
±1
±10
µA
±1
±10
µA
−1.5 −0.8
V
V_CC
12
19
mA
5.8
8
mA
4.5
8.5
mA
18
48
mA
DO+,
5
pF
DO−
RI+,
5
pF
RI−
Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should
be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Note 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to device ground unless otherwise specified.
Note 3: All typicals are given for V_CC = +3.3V or +5.0V and T_A = +25˚C, unless otherwise stated.
Note 4: ESD Rating:
HBM (1.5 kΩ, 100 pF) > 2.0 kV
EIAJ (0Ω, 200 pF) > 200V.
Note 5: C_L includes probe and fixture capacitance.
Note 6: Generator waveforms for all tests unless otherwise specified; f = 1 MHz, Z_O = 50Ω, t_r = t_f ≤ 6.0 ns (0%–100%).
AC Electrical Characteristics
T_A = −40˚C to +85˚C, V_CC = 3.3V ± 0.3V. (Note 6)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRIVER TIMING REQUIREMENTS
t_PHLD
Differential Propagation Delay High to Low
R_L = 100Ω,
2.0
4.0
6.5
ns
t_PLHD
Differential Propagation Delay Low to High
C_L = 10 pF
1.0
5.6
7.0
ns
t_SKD
Differential Skew |t_PHLD − t_PLHD|
(Figure 2 and Figure 3)
0.4
1.0
ns
t_TLH
Transition Time Low to High
0.2
0.7
3.0
ns
t_THL
Transition Time High to Low
0.2
0.8
3.0
ns
3
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