CSD18502Q5B Datasheet, PDF (4/12 Pages) Texas Instruments – 40-V, N-Channel NexFET Power MOSFETs

CSD18502Q5B
SLPS320 – NOVEMBER 2012
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(T_A = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
180
160
TEXT ADDED FOR SPACING
200
180 ^{VDS = 5V}
140
120
100
80
60
40
20
0
0
V_GS =10V
V_GS =6.5V
V_GS =4.5V
0.2
0.4
0.6
0.8
1
V_DS - Drain-to-Source Voltage (V)
G001
Figure 3. Saturation Characteristics
160
140
120
100
80
60
40
20
0
0
T_C = 125°C
T_C = 25°C
T_C = −55°C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
G001
Figure 4. Transfer Characteristics
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10
I_D = 30A
V_DS = 20V
8
50000
10000
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C_iss = C_gd + C_gs
C_oss = C_ds + C_gd
C_rss = C_gd
6
1000
4
100
2
0
0 5 10 15 20 25 30 35 40 45 50 55
Q_g - Gate Charge (nC)
G001
Figure 5. Gate Charge
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2.6
2.4
I_D = 250uA
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−75
−25
25
75
125
175
T_C - Case Temperature (ºC)
G001
Figure 7. Threshold Voltage vs. Temperature
10
0
10
20
30
40
V_DS - Drain-to-Source Voltage (V)
G001
Figure 6. Capacitance
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12
T_C = 25°C Id = 30A
10
T_C = 125ºC Id = 30A
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to- Source Voltage (V)
G001
Figure 8. On-State Resistance vs. Gate-to-Source Voltage
4
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