BQ4015 Datasheet, PDF (4/13 Pages) Texas Instruments – 512Kx8 Nonvolatile SRAM

bq4015/Y
Recommended DC Operating Conditions (TA = TOPR)
Symbol
Parameter
Minimum
Typical
VCC
Supply voltage
4.5
5.0
4.75
5.0
VSS
Supply voltage
0
0
VIL
Input low voltage
-0.3
-
VIH
Input high voltage
2.2
-
Note:
Typical values indicate operation at TA = 25°C.
Maximum
5.5
5.5
0
0.8
VCC + 0.3
Unit
Notes
V
bq4015Y
V
bq4015
V
V
V
DC Electrical Characteristics (TA = TOPR, VCCmin ≤ VCC ≤ VCCmax)
Symbol
Parameter
ILI
Input leakage current
Minimum Typical Maximum Unit
-
-
±1
µA
ILO
Output leakage current
-
-
±1
µA
VOH
Output high voltage
2.4
-
-
V
VOL
Output low voltage
-
-
0.4
V
ISB1
Standby supply current
-
3
5
mA
ISB2
Standby supply current
-
0.1
1
mA
ICC
Operating supply current
-
-
90
mA
4.55
4.62
4.75
V
VPFD
Power-fail-detect voltage
4.30
4.37
4.50
V
VSO
Supply switch-over voltage
-
3
-
V
Note:
Typical values indicate operation at TA = 25°C, VCC = 5V.
Conditions/Notes
VIN = VSS to VCC
CE = VIH or OE = VIH or
WE = VIL
IOH = -1.0 mA
IOL = 2.1 mA
CE = VIH
CE ≥ VCC - 0.2V,
0V ≤ VIN ≤ 0.2V,
or VIN ≥ VCC - 0.2
Min. cycle, duty = 100%,
CE = VIL, II/O = 0mA,
A17 < VIL or A17 > VIH,
A18 < VIL or A18 > VIH
bq4015
bq4015Y
Capacitance (TA = 25°C, F = 1MHz, VCC = 5.0V)
Symbol
CI/O
CIN
Parameter
Input/output capacitance
Input capacitance
Minimum
-
-
Typical
-
-
Maximum
8
10
Unit
pF
pF
Conditions
Output voltage = 0V
Input voltage = 0V
Note:
These parameters are sampled and not 100% tested.
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