TPS61240 Datasheet, PDF (3/25 Pages) Texas Instruments – 3.5-MHz High Efficiency Step-Up Converter

TPS61240, TPS61241
www.ti.com .............................................................................................................................................................. SLVS806A – APRIL 2009 – REVISED MAY 2009
ELECTRICAL CHARACTERISTICS
Over full operating ambient temperature range, typical values are at T_A = 25°C. Unless otherwise noted, specifications apply
for condition V_IN = EN = 3.6V. External components C_IN = 2.2µF, C_OUT = 4.7µF 0603, L = 1µH, refer to PARAMETER
MEASUREMENT INFORMATION.
PARAMETER
TEST CONDITIONS
DC/DC STAGE
V_IN
V_OUT
V_{O_Ripple}
I_SW
Input voltage range
Fixed output voltage range
Ripple voltage, PWM mode
Output current
Switch valley current limit
Short circuit current
High side MOSFET on-resistance⁽¹⁾
Low Side MOSFET on-resistance⁽¹⁾
Operating quiescent current
Shutdown current
2.3 V ≤ V_IN ≤ 5.5 V, 0 mA ≤ I_OUT ≤ 200 mA
I_LOAD = 150 mA
V_IN 2.3 V to 5.5 V
V_OUT = V_GS = 5.0 V (TPS61240)
V_OUT = V_GS = 5.0 V (TPS61241)
V_OUT = V_GS = 5.0 V
V_IN = V_GS = 5.0V, T_A = 25°C⁽¹⁾
V_IN = V_GS = 5.0 V, T_A = 25°C ⁽¹⁾
I_OUT = 0 mA, Power save mode
EN = GND
Reverse leakage current V_OUT
Leakage current from battery to
V_OUT
Line transient response
EN = 0, V_OUT = 5 V
EN = GND
V_IN 600 mVp-p AC square wave, 200Hz,
12.5% DC at 50/200mA load
I_IN
V_UVLO
Load transient response
Input bias current, EN
Undervoltage lockout threshold
0–50 mA, 50–0 mA V_IN = 3.6V T_Rise = T_Fall = 0.1µs
50–200 mA, 200–50 mA, V_IN = 3.6 V, T_Rise = T_Fall = 0.1µs
EN = GND or V_IN
Falling
Rising
CONTROL STAGE
V_IH
V_IL
OVC
High level input voltage, EN
Low level input voltage, EN
Input over-voltage threshold
2.3 V ≤ V_IN ≤ 5.5 V
2.3 V ≤ V_IN ≤ 5.5 V
Falling
Rising
t_Start
Start-up time
Time from active EN to start switching, no-load until V_OUT
is stable 5V
DC/DC STAGE
Freq
T_SD
Thermal shutdown
Thermal shutdown hysteresis
See Figure 7 (Frequency Dependancy vs I_OUT)
Increasing junction temperature
Decreasing junction temperature
MIN TYP MAX UNIT
2.3
4.9 5.0
200
500 600
600 700
200 350
290
250
30
5.5 V
5.1 V
20 mVpp
mA
mA
mApk
mΩ
mΩ
40 µA
1.5 µA
2.5 µA
2.5 µA
±25 ±50 mVpk
50
mVpk
150
0.01 1.0 µA
2.0 2.1 V
2.1 2.2 V
1.0 V
0.4
V
5.9
V
6.0
300 µs
3.5
MHz
140
°C
20
°C
(1) DRV package has an increased R_DSon of about 40mΩ due to bond wire resistance.
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Product Folder Link(s) :TPS61240, TPS61241