LME49720 Datasheet, PDF (3/36 Pages) Texas Instruments – LME49720 Dual High Performance, High Fidelity Audio Operational Amplifier

LME49720
www.ti.com
SNAS393C – MARCH 2007 – REVISED APRIL 2013
ABSOLUTE MAXIMUM RATINGS ^(1)(2)(3)
Power Supply Voltage
Storage Temperature
(V_S = V⁺ - V^-)
36V
−65°C to 150°C
Input Voltage
Output Short Circuit ⁽⁴⁾
(V-) - 0.7V to (V+) + 0.7V
Continuous
Power Dissipation
ESD Susceptibility ⁽⁵⁾
ESD Susceptibility ⁽⁶⁾
Pins 1, 4, 7 and 8
Internally Limited
2000V
200V
Pins 2, 3, 5 and 6
100V
Junction Temperature
150°C
Thermal Resistance
Temperature Range
Supply Voltage Range
θ_JA (SOIC)
θ_JA (PDIP)
θ_JA (TO-99)
θ_JC (TO-99)
T_MIN ≤ T_A ≤ T_MAX
145°C/W
102°C/W
150°C/W
35°C/W
–40°C ≤ T_A ≤ 85°C
±2.5V ≤ V_S ≤ ± 17V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For enusred
specifications and test conditions, see Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4) Amplifier output connected to GND, any number of amplifiers within a package.
(5) Human body model, 100pF discharged through a 1.5kΩ resistor.
(6) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω).
ELECTRICAL CHARACTERISTICS FOR THE LME49720 ⁽¹⁾⁽²⁾
The following specifications apply for V_S = ±15V, R_L = 2kΩ, f_IN = 1kHz, and T_A = 25°C, unless otherwise specified.
Symbol
Parameter
Conditions
LME49720
Typical ⁽³⁾
Limit ⁽⁴⁾
THD+N
IMD
Total Harmonic Distortion + Noise
Intermodulation Distortion
A_V = 1, V_OUT = 3V_rms
R_L = 2kΩ
R_L = 600Ω
A_V = 1, V_OUT = 3V_RMS
Two-tone, 60Hz & 7kHz 4:1
0.00003
0.00003
0.00005
0.00009
GBWP
Gain Bandwidth Product
55
45
SR
Slew Rate
±20
±15
FPBW
Full Power Bandwidth
V_OUT = 1V_P-P, –3dB
referenced to output magnitude
10
at f = 1kHz
t_s
Settling time
A_V = –1, 10V step, C_L = 100pF
0.1% error range
1.2
Equivalent Input Noise Voltage
f_BW = 20Hz to 20kHz
0.34
0.65
e_n
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
2.7
4.7
6.4
i_n
Current Noise Density
f = 1kHz
f = 10Hz
1.6
3.1
V_OS
Offset Voltage
±0.1
±0.7
Units
(Limits)
% (max)
%
MHz (min)
V/μs (min)
MHz
μs
μV_RMS
(max)
nV/√Hz
(max)
pA/√Hz
mV (max)
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For enusred
specifications and test conditions, see Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) Typical specifications are specified at +25ºC and represent the most likely parametric norm.
(4) Tested limits are ensured to AOQL (Average Outgoing Quality Level).
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