CSD16570Q5B_15 Datasheet, PDF (3/15 Pages) Texas Instruments – CSD16570Q5B 25-V N-Channel NexFET Power MOSFET

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5 Specifications
CSD16570Q5B
SLPS496 – JULY 2014
5.1 Electrical Characteristics
(T_A = 25°C unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BV_DSS
I_DSS
I_GSS
V_GS(th)
Drain-to-Source Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
R_DS(on) Drain-to-Source On-Resistance
g_ƒs
Transconductance
DYNAMIC CHARACTERISTICS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_G
Series Gate Resistance
Q_g
Gate Charge Total (4.5 V)
Q_g
Gate Charge Total (10 V)
Q_gd
Gate Charge Gate-to-Drain
Q_gs
Gate Charge Gate-to-Source
Q_g(th)
Gate Charge at V_th
Q_oss
Output Charge
t_d(on)
Turn On Delay Time
t_r
Rise Time
t_d(off)
Turn Off Delay Time
t_ƒ
Fall Time
DIODE CHARACTERISTICS
V_SD
Diode Forward Voltage
Q_rr
Reverse Recovery Charge
t_rr
Reverse Recovery Time
TEST CONDITIONS
V_GS = 0 V, I_D = 250 μA
V_GS = 0 V, V_DS = 20 V
V_DS = 0 V, V_GS = 20 V
V_DS = V_GS, I_D = 250 μA
V_GS = 4.5 V, I_D = 50 A
V_GS = 10 V, I_D = 50 A
V_DS = 2.5 V, I_D = 50 A
V_GS = 0 V, V_DS = 12 V, ƒ = 1 MHz
V_DS = 12.5 V, I_D = 50 A
V_DS = 12.5 V, V_GS = 0 V
V_DS = 12.5 V, V_GS = 10 V,
I_DS = 50 A, R_G = 0 Ω
I_SD = 50 A, V_GS = 0 V
V_DS= 12.5 V, I_F = 50 A,
di/dt = 300A/μs
MIN TYP MAX UNIT
25
V
1 μA
100 nA
1.1 1.5 1.9 V
0.68 0.82 mΩ
0.49 0.59 mΩ
278
S
10700 14000 pF
1660 2160 pF
996 1290 pF
1.8 3.6 Ω
95 124 nC
192 250 nC
31
nC
29
nC
15
nC
35
nC
5
ns
43
ns
156
ns
72
ns
0.8
1V
34
nC
21
ns
5.2 Thermal Information
(T_A = 25°C unless otherwise stated)
THERMAL METRIC
R_θJC
R_θJA
Junction-to-Case Thermal Resistance⁽¹⁾
Junction-to-Ambient Thermal Resistance⁽¹⁾⁽²⁾
MIN TYP MAX UNIT
0.8
°C/W
50
(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches
(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board
design.
(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.
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