BQ26500PWR Datasheet, PDF (3/30 Pages) Texas Instruments – SINGLE-CELL LI-ION AND LI-POL BATTERY

bq26500
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SLUS567A − JUNE, 2003 − REVISED OCTOBER 2003
ELECTRICAL CHARACTERISTICS(continued)
TJ = −20°C to 70°C, TJ = TA, 2.6 V ≤ VCC ≤ 4.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
TIME MEASUREMENT
fOSC
Internal oscillator frequency
fOSC
Internal oscillator frequency
CAPACITY MEASUREMENT
TA = 0°C to 50°C
−3.5% +1.0%
−2.5% +1.0%
Voltage-to-frequency converter offset
Voltage-to-frequency converter gain
variabilty(3)
Voltage-to-frequency input
(VSRP − VSRN)
EEPROM PROGRAMMING (VCC ≥ 3.0 V, 20°C ≤ TA ≤ 35°C)(1)
tRISE
Programming voltage rise time
tPROG Programming voltage high time
VPROG = 21 V
tFALL
Programming voltage fall time
VPROG Programming voltage
Applied to GPIO pin
IPROG EEPROM programming current
Current into GPIO pin
IO PORT (GPIO) AND SERIAL INTERFACE (HDQ)
−100
1
20
1
20
VIH
High-level input voltage
1.9
VIL
Low-level input voltage
VOL
GPIO low-level output voltage
IOL = 0.3 mA
VOL
HDQ low-level output voltage
IOL = 2 mA
IHDQPD HDQ internal pull-down current
STANDARD SERIAL COMMUNICATION (HDQ) TIMING⁽²⁾
t(B)
Break timing
190
t(BR)
Break recovery time
40
t(CYCH) Host bit window timing
190
t(HW1) Host sends 1 time
17
t(HW0) Host sends 0 time
100
t(RSPS) bq26500 to host response time
190
t(CYCD) bq26500 bit window timing
190
t(DW1) bq26500 sends 1 time
32
t(DW0) bq26500 sends 0 time
80
(1) _{Maximum number of programming cycles on the EEPROM is 10 and data retention time is 10 years at TA=85°C}
(2) _{See Figure 1.}
(3) _{Not a production tested parameter.}
MAX
+2.5%
+2.5%
15
1%
100
100
22
3
0.7
0.4
0.4
3
50
145
320
260
50
145
UNIT
µV
mV
ms
V
mA
V
µA
µs
The following timing diagrams describe break and break recovery timing (a), host transmitted bit timing (b),
bq26500 transmitted bit timing (c), and bq26500 to host response timing (d).
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