 English |
|
|
|
|
|
|
|
| BQ24315 Datasheet, PDF (3/20 Pages) Texas Instruments – OVERVOLTAGE AND OVERCURRENT PROTECTION IC AND Li+ CHARGER FRONT-END PROTECTION IC | |||
| |||
| ◁ |
bq24315
www.ti.com
SLUS817 â MARCH 2008
ELECTRICAL CHARACTERISTICS
over junction temperature range â40°C to 125°C and recommended supply voltage (unless otherwise noted)
IN
UVLO
Vhys(UVLO)
tDGL(PGOOD)
PARAMETER
Undervoltage lock-out, input power
detected threshold
Hysteresis on UVLO
Deglitch time, input power detected
status
IDD
Operating current
ISTDBY
Standby current
INPUT TO OUTPUT CHARACTERISTICS
VDO
Drop-out voltage IN to OUT
OUPUT VOLTAGE REGULATION
VO(REG)
Output voltage
INPUT OVERVOLTAGE PROTECTION
VOVP
tPD(OVP)
Vhys(OVP)
tON(OVP)
Input overvoltage protection threshold
Input OV propagation delay(1)
Hysteresis on OVP
Recovery time from input overvoltage
condition
INPUT OVERCURRENT PROTECTION
IOCP
Input overcurrent protection threshold
range
IOCP
Input overcurrent protection threshold
K(ILIM)
tBLANK(OCP)
Adjustable current limit factor
Blanking time, input overcurrent
detected
tREC(OCP)
Recovery time from input overcurrent
condition
BATTERY OVERVOLTAGE PROTECTION
BVOVP
Battery overvoltage protection
threshold
Vhys(Bovp)
I(VBAT)
tDGL(Bovp)
Hysteresis on BVOVP
Input bias current on VBAT pin
Deglitch time, battery overvoltage
detected
THERMAL PROTECTION
TJ(OFF)
Thermal shutdown temperature
TJ(OFF-HYS) Thermal shutdown hysteresis
LOGIC LEVELS ON CE
VIL
Low-level input voltage
VIH
High-level input voltage
IIL
Low-level input current
IIH
High-level input current
LOGIC LEVELS ON FAULT
VOL
Output low voltage
Ilkg
Leakage current, FAULT pin HI-Z
TEST CONDITIONS
CE = Low, VIN increasing from 0V to 3V
CE = Low, VIN decreasing from 3V to 0V
CE = Low. Time measured from VIN 0V â 5V 1µs
rise-time, to output turning ON
CE = Low, No load on OUT pin,
VIN = 5V, R(ILIM) = 25kâ¦
CE = High, VIN = 5V
CE = Low, VIN = 5V, IOUT = 1A
CE = Low, VIN = 5.7V, IOUT = 1A
CE = Low, VIN increasing from 5V to 7.5V
CE = Low
CE = Low, VIN decreasing from 7.5V to 5V
CE = Low, Time measured from
VIN 7.5V â 5V, 1µs fall-time
CE = Low, R(ILIM) = 24.9kâ¦,
3 V ⤠VIN < VOVP â Vhys(OVP)
CE = Low, VIN > 4.4V
CE = Low, VIN > 4.4V
V(VBAT) = 4.4V, TJ = 25°C
CE = Low, VIN > 4.4V. Time measured from V(VBAT)
rising from 4.1V to 4.4V to FAULT going low.
V(/CE) = 0V
V(/CE) = 1.8V
ISINK = 5mA
V(/FAULT) = 5V
MIN TYP
2.6 2.7
200 260
8
400
65
170
5.3 5.5
5.71 5.85
200
20
60
8
300
900 1000
25
176
64
4.30 4.35
200 275
176
140
20
0
1.4
(1) Not tested in production. Specified by design.
MAX UNIT
2.8 V
300 mV
ms
600 µA
95 µA
280 mV
5.7 V
6.00 V
ns
110 mV
ms
1500 mA
1100 mA
Aâ¦
µs
ms
4.4 V
320 mV
10 nA
µs
150 °C
°C
0.4 V
V
1 µA
15 µA
0.2 V
10 µA
Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): bq24315
Submit Documentation Feedback
3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese