BQ24085 Datasheet, PDF (3/34 Pages) Texas Instruments – 750 mA SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC WITH THERMAL REGULATION

bq24085, bq24086
bq24087, bq24088
www.ti.com .................................................................................................................................................... SLUS784B – DECEMBER 2007 – REVISED MAY 2008
ELECTRICAL CHARACTERISTICS
over recommended operating range, T_J = 0 –125°C range, See the Application Circuits section, typical values at T_J = 25°C
(unless otherwise noted), R_TMR = 49.9KΩ
PARAMETER
TEST CONDITIONS
POWER DOWN THRESHOLD – UNDERVOLTAGE LOCKOUT
UVLO
Power down threshold
V_(IN) = 0 V, increase V_(OUT): 0 → 3 V OR
V_(OUT) = 0 V, increase V_(IN): 0 → 3 V,
CE = LO ⁽¹⁾
t_DGL(PG)
Deglitch time on power good
V_(IN) = 0 V → 5 V in 1 µs to
PG:HI → LO
INPUT POWER DETECTION, CE = HI or LOW, V_(IN) > 3.5 V
V_IN(DT)
Input power detection threshold
V_(IN) detected at [V_(IN) – V_(OUT)] > V_IN(DT)
V_HYS(INDT)
Input power detection hysteresis
Input power not detected at
[V_(IN) – V_(OUT)] < [V_IN(DT) – V_HYS(INDT)]
t_DGL(NOIN)
Delay time, input power not detected
status ⁽¹⁾
PG: LO →HI after t_DGL(NOIN)
t_DLY(CHGOFF) Charger off delay
INPUT OVERVOLTAGE PROTECTION
Charger turned off after t_DLY(CHGOFF), Measured
from PG: LO → HI; Timer reset after t_DLY(CHGOFF)
V_(OVP)
Input overvoltage detection threshold V_(IN) increasing
bq24088
bq24085/6/7
V_HYS(OVP)
Input overvoltage hysteresis
V_(IN) decreasing
bq24088
bq24085/6/7
t_DGL(OVDET) Input overvoltage detection delay
CE = HI or LO, Measured from V_(IN) > V_(OVP) to
PG: LO → HI; VIN increasing
t_DGL(OVNDET) Input overvoltage not detected delay⁽¹⁾
CE = HI or LO, Measured from V_(IN) < V_(OVP)
to PG: HI → LO; V(IN) decreasing
QUIESCENT CURRENT
I_CC(CHGOFF)
I_CC(CHGON)
I_BAT(DONE)
IN pin quiescent current, charger off
IN pin quiescent current, charger on
Battery leakage current after termination
into IC
Input power detected,
CE = HI
V_(IN) = 6 V
V_(IN) = 16.5 V
Input power detected, CE = LO, V_BAT = 4.5 V
Input power detected, charge terminated,
CE = LO
I_BAT(CHGOFF)
Battery leakage current into IC, charger
off
Input power detected, CE = HI OR
input power not detected, CE = LO
TS PIN COMPARATOR
V_(TS1)
V_(TS2)
V_HYS(TS)
CE INPUT
Lower voltage temperature threshold
Upper voltage temperature threshold
Hysteresis
Hot detected at V(TS) < V_(TS1); NTC thermistor
Cold detected at V(TS) > V_(TS2); NTC thermistor
Temp OK at V(TS) > [ V_(TS1) + V_HYS(TS) ] OR
V_(TS) < [ V_(TS2) – V_HYS(TS) ]
V_IL
Input (low) voltage
V_(/CE)
V_IH
Input (high) voltage
V_(/CE)
STAT1, STAT2 AND PG OUTPUTS , V_(IN) ≥ V_O(REG) + V_(DO-MAX)
V_OL
Output (low) saturation voltage
I_out = 5 mA (sink)
THERMAL SHUTDOWN
T_(SHUT)
T_(SHUTHYS)
Temperature trip
Thermal hysteresis
Junction temperature, temp rising
Junction temperature
MIN
1.5
30
10.2
6.2
29
60
0
2
TYP
2
25
10.5
6.5
0.5
0.2
100
350
4
1
1
30
61
2
155
20
MAX UNIT
3V
ms
130 mV
mV
10 µs
ms
11.7
V
7
V
100 µs
100 µs
200
µA
6 mA
5 µA
5 µA
31 %V(IN)
62 %V(IN)
%V(IN)
1V
V
100 mV
°C
°C
(1) Specified by design, not production tested.
Copyright © 2007–2008, Texas Instruments Incorporated
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